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Nano Electronic Properties Lab
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The lab uses electron microscopes to see the nanoscale world and open up new devices.
AboutAbout the lab
Opening the future of devices from the invisible nanoscale world.
The Ikarashi Lab uses electron microscopes as its main tool to analyze the structure and properties of materials such as semiconductors at the nanoscale.
Using advanced analysis techniques such as electron holography, which can directly visualize electric and magnetic fields at the nanoscale, the lab researches devices with new functions based on fundamental research on material properties.
The lab studies the inside of transistors in operation, and analyzes magnetic materials and nitride semiconductors such as gallium nitride (GaN).
The lab is located in the Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability.
Key terms
- Nanoscale
- The world measured in nanometers (one millionth of a millimeter), so small that it cannot be seen with the eye
- Electron holography
- An electron microscopy technique that uses the wave nature of electrons to make the electric and magnetic fields inside and around a material visible
- Magnetic skyrmion
- A tiny vortex that forms in a magnet and behaves like a particle. It moves with only a small current
ResearchResearch themes
The lab develops techniques that use high-resolution electron microscopy and electron holography to directly measure the inside of devices in operation at the nanoscale. By investigating the electronic states at semiconductor interfaces and the properties of magnetic materials and nitride semiconductors, it connects this work to the research and development of new devices.
*Illustrative imageLooking inside a transistor in operation
Using electron holography, the lab visualizes the potential distribution inside a miniature silicon transistor in operation with color coding. It can even observe how the potential distribution forms when voltage is applied.
*Illustrative imageObserving magnetic skyrmions with electron microscopy
Toward new magnetic devices, the lab analyzes magnetic materials using advanced electron microscopy methods. Magnetic skyrmions, which move with only a small current, are expected to be used in energy-saving electronic devices and memory, and the lab observes them directly with electron microscopy.
*Illustrative imageAnalyzing the properties of gallium nitride
Using cutting-edge electron microscopy methods, the lab investigates the properties of nitride semiconductors, centered on gallium nitride (GaN). Aiming at GaN devices that withstand large currents and high voltages, it works to clarify what should be added to the material and which methods work best.
MembersFaculty
- ProfessorNobuyuki Ikarashi
- Associate ProfessorMasahiro Nagao
- Assistant ProfessorEmi Kano
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Old Type Electron Microscope” Ajay Kumar Chaurasiya / CC BY-SA 4.0 (cropped)
- Looking inside a transistor in operation: “Silicon chip from a computer laser mouse under a microscope 50х” Original: Alexander Klepnev Derivative work: IamMM / CC BY-SA 4.0 (cropped)
- Observing magnetic skyrmions with electron microscopy: “Magnetic domains of grain oriented silicon or electrical steel” Matesy / CC BY-SA 3.0 (cropped)
- Analyzing the properties of gallium nitride: “A semiconductor wafer on a dicing (blue) tape. Few chips (dies) from the wafer have already been picked up (removed) for further manufacturing” Khpsoi / CC BY-SA 4.0 (cropped)
- Related lab (Functional Integrated Devices Lab): “Wafer - 4” Windell Oskay / CC BY 2.0 (cropped)
- Related lab (Advanced Device Lab): “Wafer” Santi / CC BY-SA 2.0 (cropped)
- Related lab (Quantum Optoelectronics Lab): “Ti Sapphire laser TIS-SF-07” Sergey100 / Public domain (cropped)
- Related lab (Power Electronics Lab): “Circuit Board 2015” Jguarin / CC BY-SA 4.0 (cropped)
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