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Advanced Device Lab
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A lab working toward power devices that surpass silicon, using gallium nitride.
AboutAbout the lab
Toward power devices that go beyond the limits of silicon
Suda Lab researches next-generation power devices made with gallium nitride (GaN), a semiconductor.
Today's power devices are made of silicon, but they are approaching the limits of the material, leaving little room for large improvements in performance.
GaN has excellent properties not only for blue LEDs but also as a material for power devices.
The lab handles everything from evaluating crystal properties to designing and prototyping device structures, and, depending on the theme, conducts joint research with other labs at Nagoya University and with universities and companies in Japan and abroad.
Key terms
- Power device
- A semiconductor component that converts and controls electric power. Used to handle electricity efficiently in electric vehicles, solar power generation, and more.
- Gallium nitride
- A semiconductor made of gallium and nitrogen. It is the material used in blue LEDs and also has excellent properties as a material for power devices.
- Ion implantation
- A method in which impurity atoms are ionized, accelerated, and driven into a crystal to change the electrical properties of that region.
NewsLab news
A doctoral student received the IEEE Nagoya Section Excellent Student Award and the Society of Automotive Engineers of Japan Graduate Student Research Encouragement Award
An undergraduate student received the Tokai Section Chair Award of the Institute of Electrical Engineers of Japan
A student received the IEEE Nagoya Section Excellent Student Award
ResearchResearch themes
As electrical energy grows more important in electric vehicles, solar power generation, and other areas, the lab studies power devices that use new semiconductor materials capable of exceeding the material limits of silicon. Centered on realizing ultra-high-performance power devices using gallium nitride (GaN), the lab pursues its research with an integrated view of crystals, processes, and devices.
*Illustrative imageMeasuring the fundamental properties of GaN
The fundamental physical properties of GaN, especially its behavior under high electric fields, which is important for power semiconductors, are not yet well understood. The lab has developed its own evaluation method and succeeded in evaluating the impact ionization coefficient, and it plans to go on to clarify how this differs depending on crystal orientation.
*Illustrative imageChanging targeted regions with ion implantation
The lab studies ion implantation and annealing as techniques for adding impurities at arbitrary positions. In joint research with UNIPRESS in Poland, it developed ultra-high-pressure annealing and demonstrated for the first time in the world a high activation rate of ion-implanted Mg. It is now carrying out evaluations toward application to devices.
*Illustrative imageUnraveling point defects, the disorder in crystals
Over the hundreds of steps involved in making a device, point defects arise from displaced atoms and impurities, causing degraded characteristics. The lab evaluates point defects in GaN using Hall effect measurements and deep-level transient spectroscopy (DLTS).
*Illustrative imageDeveloping GaN vertical power MOSFETs
These devices excel at handling large currents and are expected to be used in Shinkansen trains and electric vehicles. The lab works on annealing conditions that improve the interface between the gate insulator and GaN, and on clarifying and suppressing the mechanism behind threshold voltage instability.
MembersFaculty
Suda Lab consists of faculty members, doctoral, master's, and undergraduate students, researchers, technical staff, and secretaries.As of 2026
- ProfessorJun Suda
- Associate ProfessorMasahiro Horita
- Assistant ProfessorTomoya Watanabe
- Project ProfessorTetsu Kachi
- Project ProfessorYuji Ando
- Project ProfessorTsutomu Uesugi
- Project ProfessorKazuyoshi Tomita
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Wafer” Santi / CC BY-SA 2.0 (cropped)
- Measuring the fundamental properties of GaN: “Characterization bench at LAAS 0479” Guillaume Paumier (user:guillom) / CC BY-SA 3.0 (cropped)
- Changing targeted regions with ion implantation: “Minimal Fab exhibit at Tsukuba Science Square” Syced / CC0 (cropped)
- Unraveling point defects, the disorder in crystals: “Samsonite crystal structure (model ball and stick)” Ra'ike (Wikipedia) / CC0 (cropped)
- Developing GaN vertical power MOSFETs: “Dell E2210f - power supply unit - Advanced Power Electronics AP2764AI-5159” Raimond Spekking / CC BY-SA 4.0 (cropped)
- Related lab (宇宙情報処理研究グループ): “Anatomy of Earth's magnetosphere ESA518009” European Space Agency / CC BY-SA 3.0 igo (cropped)
- Related lab (ナノ情報デバイス研究グループ): “Wafer” Santi / CC BY-SA 2.0 (cropped)
- Related lab (パワーエレクトロニクス
（S） 研究グループ): “Electric insulators on top of a transformer (2)” High Contrast / CC BY 3.0 de (cropped) - Related lab (機能集積デバイス研究グループ): “Wafer - 4” Windell Oskay / CC BY 2.0 (cropped)
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