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Nano Information Devices Lab
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A lab that grows nitride semiconductor crystals to create new devices for light and power.
AboutAbout the lab
Nitride semiconductors for next-generation electronics.
The lab researches new devices made from nitride semiconductors.
Building on crystal growth technology, the lab works on light-emitting diodes (LEDs), laser diodes, solar cells, and power devices for power conversion.
Applications span a wide range of fields, including power devices for energy saving, high-frequency devices for 6G-era communications, and ultraviolet laser sources that can be used for drug discovery and sterilization.
The lab conducts its research with the aim of training people who will lead the world in new fields.
Key terms
- Nitride semiconductors
- Semiconductors made of compounds containing nitrogen, such as gallium nitride (GaN). Known as the material of blue LEDs.
- Crystal growth
- Making crystals of semiconductors and other materials by stacking atoms in an orderly arrangement.
- Power devices
- Semiconductor components that convert and control electric power. Used in electric vehicles, power supplies, and more.
NewsLab news
A master's student received a Presentation Encouragement Award at the 18th Nanostructure Epitaxial Growth Conference
A group led by Associate Professor Kushimoto and others received the Third Prize at the Berthold Leibinger Innovationspreis
A master's student received a Presentation Encouragement Award at the 17th Nanostructure Epitaxial Growth Conference
A student received a Research Encouragement Award from the Nanostructure Epitaxial Growth Subcommittee
ResearchResearch themes
Aiming to drive innovation in next-generation electronics, the lab develops new devices based on crystal growth technology for nitride semiconductors. It works on a wide range of applications, including energy savings through high-efficiency power devices, high-frequency devices for the 6G era, and new ultraviolet laser sources applicable to drug discovery and sterilization.
*Illustrative imageCrystal growth of nitride semiconductors
Focusing on the potential of GaN-based semiconductors as new materials to carry electronics and photonics beyond silicon, the lab develops crystal growth methods and microstructure fabrication techniques. It creates heterojunction structures such as GaN/AlGaN by metalorganic vapor phase epitaxy and investigates their crystallinity and their electronic and optical properties.
*Illustrative imagePower devices for energy saving
The lab researches high-efficiency GaN-based power devices aimed at lower power consumption.
*Illustrative imageHigh-frequency devices for the 6G era
Looking ahead to the 6G era, the lab works on developing high-frequency devices that will enable next-generation communications.
*Illustrative imageNew ultraviolet laser sources
The lab is developing new ultraviolet laser sources that can be applied to drug discovery and sterilization.
MembersFaculty
The lab's members consist of faculty, doctoral and master's students, researchers, international joint researchers, research assistants, and secretaries.As of 2026
- ProfessorYoshio Honda
- Distinguished ProfessorHiroshi Amano
- Project ProfessorMarkus Pristovsek
- Project ProfessorChiaki Sasaoka
- Associate ProfessorMakoto Deki
- Associate ProfessorMaki Kushimoto
- Project Associate ProfessorAtsushi Tanaka
- Project Associate ProfessorDaisuke Tomida
- Project Associate ProfessorAkira Kusaba
- Assistant ProfessorHeajeong Cheong
- Project Assistant ProfessorJia Wang
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Wafer” Santi / CC BY-SA 2.0 (cropped)
- Crystal growth of nitride semiconductors: “Semiconductor Wafer of Microelectronics” DrHughManning / CC BY-SA 4.0 (cropped)
- Power devices for energy saving: “ASRock 775Twins-HDTV - Advanced Power Electronics 9T16GH-7814” Raimond Spekking / CC BY-SA 4.0 (cropped)
- High-frequency devices for the 6G era: “Monolithic microwave integrated circuit MSA0686 fixed” Appaloosa / CC BY-SA 3.0 (cropped)
- New ultraviolet laser sources: “Excimer laser 1” IoOALP / CC BY-SA 4.0 (cropped)
- Related lab (Quantum Optoelectronics Lab): “Ti Sapphire laser TIS-SF-07” Sergey100 / Public domain (cropped)
- Related lab (Communication Theory Lab): “LED traffic light on red” Kevin Payravi / CC BY-SA 4.0 (cropped)
- Related lab (Life Electronics Lab): “Plasma-filaments” The original uploader was Iantresman at English Wikipedia. / CC BY 2.5 (cropped)
- Related lab (Advanced Device Lab): “Wafer” Santi / CC BY-SA 2.0 (cropped)
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