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Plasma Electronics Lab
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The lab creates and measures low-temperature plasma and applies it to semiconductors and materials fabrication.
AboutAbout the lab
Low-temperature plasma × measurement × materials processing
The Uchida-Suzuki Lab studies how to generate low-temperature plasma, measure it, and use it for making materials.
The lab designs discharge, electrode, and equipment conditions to control plasma suited to the target process.
Using imaging measurement and modeling, the lab investigates spatial structures and particle motion inside plasma.
The lab is extending this work to semiconductor manufacturing processes and to functional materials and materials for energy devices.
Key terms
- Low-temperature plasma
- An ionized gas containing electrons and ions in which the overall gas temperature is low. It is used in applications such as semiconductor processing
- Sputter deposition
- A method of making thin films by bombarding a material with ions from plasma and letting the ejected atoms accumulate on a substrate
- High-aspect-ratio structure
- A structure, such as a narrow trench or hole, whose depth or height is much greater than its width
ResearchResearch themes
The lab conducts research that contributes to semiconductors and functional materials through the generation, measurement, and materials application of low-temperature plasma. Spanning plasma generation control, measurement and analysis, sputter deposition, and electrode materials, it explores foundational technologies from both the process side and the materials side.
*Illustrative imageCreating Nanostructured Films by Sputter Deposition
This research forms and controls films with structures on the nanometer scale by sputter deposition (PVD). The lab is expanding applications to functional nanomaterials and materials for energy devices.
*Illustrative imageSeeing Plasma in 3D from Images
By combining images taken from many directions to reconstruct a three-dimensional volume, the lab visualizes and analyzes the 3D spatial distribution and fluctuations of plasma.
*Illustrative imageParticle Behavior in Narrow, Deep Structures
The lab investigates how particles are transported and charged inside the high-aspect-ratio structures formed during semiconductor processing. It aims to understand and control the angular spread of energetic particles and charging-up behavior.
MembersFaculty
- ProfessorGiichiro Uchida
- Associate ProfessorHaruka Suzuki
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Bell Jar 35 with Argon Plasma” Diener electronic GmbH + Co KG / CC BY-SA 4.0 (cropped)
- Creating Nanostructured Films by Sputter Deposition: “Princip naprašování” Vítězslav Lamač / CC BY-SA 4.0 (cropped)
- Seeing Plasma in 3D from Images: “Glow discharge regions” Derived file: Chetvorno Original file: Jannis Andrija Schnitzer / CC BY-SA 2.0 (cropped)
- Particle Behavior in Narrow, Deep Structures: “Minimal Fab exhibit at Tsukuba Science Square 7” Syced / CC0 (cropped)
- Related lab (Life Electronics Lab): “Plasma-filaments” The original uploader was Iantresman at English Wikipedia. / CC BY 2.5 (cropped)
- Related lab (Plasma Energy Engineering Lab): “TFTR 1989” Princeton Plasma Physics Laboratory / CC BY 3.0 (cropped)
- Related lab (Plasma Nanoprocess Science Lab): “Plasma Pencil” Entropi5 / CC BY-SA 3.0 (cropped)
- Related lab (Energy Control Engineering (S) Lab): “Silicon heterojunction solar cell” Radiotrefoil / CC BY-SA 4.0 (cropped)
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