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Functionality Emergence Integrated Systems Lab
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A lab that aims to improve semiconductor device performance with new materials and new structures.
AboutAbout the lab
Higher-performance semiconductors through new materials and structures.
The Functionality Emergence Integrated Systems Lab conducts research aimed at higher performance by incorporating new structures and new materials into semiconductor integrated circuits.
Semiconductor device research requires knowledge from many fields, including mechanical engineering, chemistry, materials engineering, and electrochemistry, in addition to electronic engineering.
The lab therefore pursues its research in an interdisciplinary way, from verification through simulation to fabricating actual devices and testing them.
On the lab's website, it is also introduced under the name "Kino Lab."
Key terms
- Negative thermal expansion material
- A material that shows negative thermal expansion, contracting in volume when heated
- Tunnel FET
- A type of transistor. In this lab, it is used as the driving element of flash memory and in the structure of sensors
- Three-dimensional integration
- A technology that stacks integrated circuits vertically to increase integration density
- FET biosensor
- A sensor with a molecular recognition element attached on top of the gate insulating film that outputs the amount of adsorbed molecules as an electrical signal
NewsLab news
Associate Professor Kino co-authored a chapter in "Latest Development Trends, Control Technologies, and Applications of Negative Thermal Expansion Materials"
Associate Professor Kino co-authored a chapter in "Lowering the CTE of Semiconductor Packages and Countermeasures against Warpage"
Associate Professor Kino co-authored a chapter in "3D Semiconductor Packaging Technology"
Associate Professor Kino co-authored a chapter in "Development Trends in Materials for Next-Generation High-Speed and High-Frequency Transmission"
ResearchResearch themes
The lab conducts research to further improve semiconductor device performance and expand application fields. Specifically, it works on higher performance through new materials and structures, system integration through three-dimensional integration, and higher sensitivity of FET biosensors.
*Illustrative imageHigher performance through new materials
Introducing strain into a transistor can increase its drive current. The lab proposes an unprecedented strain-introduction technique that uses negative thermal expansion materials, which contract in volume when heated.
*Illustrative imageDeveloping and applying new-structure memory
The lab studies a new memory device that combines flash memory with a tunnel FET as the driving element. It aims to lower the drive voltage and to expand into new applications such as neuromorphic devices.
*Illustrative imageSystem integration through three-dimensional integration
As device miniaturization becomes more difficult each year, the lab studies the key technologies of three-dimensional integration, which stacks integrated circuits vertically to increase integration density. It also demonstrates the resulting performance improvement of integrated circuits.
*Illustrative imageHigher sensitivity of FET biosensors
The lab works on FET biosensors, which output the amount of target molecules adsorbed on a molecular recognition element as an electrical signal. By using a tunnel FET structure instead of a conventional MOSFET, it aims to make the sensors more sensitive.
MembersFaculty
The members of the Functionality Emergence Integrated Systems Lab consist of faculty, master's and undergraduate students, and research students.As of 2026
- Associate ProfessorHisashi Kino
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “2N1307 transistor bond wires” Mister rf / CC BY-SA 4.0 (cropped)
- Higher performance through new materials: “Transistorer (cropped)” Mister rf at English Wikipedia / CC BY-SA 3.0 (cropped)
- Developing and applying new-structure memory: “Sony-PlayStation2-SCPH-70001-Motherboard-Top (cropped) 2x Samsung K4R271669F” Evan-Amos / Public domain (cropped)
- System integration through three-dimensional integration: “2D vs 2.5D vs 3D Semiconductor Packaging with Glass Interposers” Yashtiwari663 / CC BY-SA 4.0 (cropped)
- Higher sensitivity of FET biosensors: “Lab on a Chip ( )” National Institute of Standards and Technology / Public domain (cropped)
- Related lab (Microdevice Lab): “3x3 Quilt Packaging Chip Array” Jacksontlu / CC BY-SA 4.0 (cropped)
- Related lab (Micro/Nano Laser Device Lab): “Laser module” 彭家杰 / CC BY-SA 3.0 (cropped)
- Related lab (Circular Integrated Photonics Lab): “Inkjet-Nummerierwerk” Monster4711 / CC BY-SA 4.0 (cropped)
- Related lab (High-Frequency Integrated Circuits and Microwave Communication Devices Lab): “RFID-tag-with-energy-harvesting-module” B. Molina-Farrugia, A. Rivadeneyra, J. Fernández-Salmerón, F. Martínez-Martí, J. Banqueri, M. A. Carvajal / CC BY 4.0 (cropped)
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