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Mitsubishi Chemical GaN Substrate Device Industry-Academia Collaborative Research Lab
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A research division that explores the relationship between high-quality GaN substrates and device characteristics.
AboutAbout the lab
Linking GaN substrate quality to device characteristics
The Mitsubishi Chemical GaN Substrate Device Industry-Academia Collaborative Research Lab conducts research and development on high-quality GaN substrates, which serve as the foundation for new device structures that take advantage of the excellent physical properties of gallium nitride (GaN).
The lab investigates how substrate quality relates to device characteristics, and aims to clarify the mechanisms behind that relationship.
The lab is one of the industry-academia collaborative research divisions at the Institute of Materials and Systems for Sustainability.
Key terms
- GaN substrate
- A substrate made of gallium nitride (GaN). It serves as the foundation for new device structures.
- Industry-academia collaborative research division
- A research division, named after a company, established at the Institute of Materials and Systems for Sustainability.
ResearchResearch themes
The lab researches and develops high-quality GaN substrates as the foundation for new device structures that take advantage of the excellent physical properties of gallium nitride (GaN). Investigating the relationship between substrate quality and device characteristics is the central axis of its research.
*Illustrative imageRelationship between substrate quality and device characteristics
The lab investigates how substrate quality (crystal defects, impurities, etc.) relates to device characteristics. It also aims to clarify the mechanisms that give rise to this relationship.
*Illustrative imageSubstrate requirements for new devices
The lab aims to clarify what qualities and characteristics are required of GaN substrates for new devices.
MembersFaculty
- Project ProfessorHidetaka Amanai
- Project ProfessorKenji Iso
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Cem Bascer 190206-N-NO204-765” QROMIS / Public domain (cropped)
- Relationship between substrate quality and device characteristics: “MTJ with Waveguide Electrodes & Contacting GSG Probe for Testing” OJB Quantum / CC BY 4.0 (cropped)
- Substrate requirements for new devices: “Semiconductor clean room” Aileen Devlin/Jefferson Lab from Newport News, USA / Public domain (cropped)
- Related lab (D4 Atomic Film Engineering Industry-Academia Collaborative Research Division Lab): “Titanium strip thin film interference” AzideIon / CC BY-SA 4.0 (cropped)
- Related lab (NGK Advanced Nano Materials Industry-Academia Collaborative Research Division Lab): “183483main MSRR-11” NASA / Public domain (cropped)
- Related lab (UJ-Crystal Ultra-High-Quality SiC Semiconductor Industry-Academia Collaborative Research Lab): “Silicon-carbide-3D-balls” 作者不詳 / Public domain (cropped)
- Related lab (Toyota Central R&D Labs GaN Power Device Industry-Academia Joint Research Division Lab): “Wafer - 5” Windell Oskay / CC BY 2.0 (cropped)
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