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UJ-Crystal Ultra-High-Quality SiC Semiconductor Industry-Academia Collaborative Research Lab
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An industry-academia collaborative research division that studies solution growth technology for SiC crystals.
AboutAbout the lab
Studying SiC crystals through solution growth
The UJ-Crystal Ultra-High-Quality SiC Semiconductor Industry-Academia Collaborative Research Lab is one of the industry-academia collaborative research divisions at the Institute of Materials and Systems for Sustainability, and conducts research on solution growth technology for SiC crystals.
According to the division's description, UJ-Crystal Inc., a venture company spun out of Nagoya University, aims to achieve early real-world deployment of ultra-high-quality SiC single-crystal substrates using SiC solution growth technology and machine learning.
The division states that this will achieve further energy savings in fields such as EVs and smart grids, and contribute to carbon neutrality.
Key terms
- SiC single-crystal substrate
- A plate made of a single crystal of silicon carbide (SiC). It serves as the foundation for fabricating semiconductor devices.
- SiC solution growth method
- A method of growing SiC crystals from a solution.
- Smart grid
- A power grid that uses information technology to efficiently control the flow of electricity.
ResearchResearch themes
According to the division's description, UJ-Crystal Inc., a venture company spun out of Nagoya University, aims to achieve early real-world deployment of ultra-high-quality SiC single-crystal substrates using SiC solution growth technology and machine learning. The division sets the goal of achieving further energy savings in fields such as EVs and smart grids, and contributing to carbon neutrality.
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MembersFaculty
- Project Associate ProfessorKenta Murayama
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Silicon-carbide-3D-balls” 作者不詳 / Public domain (cropped)
- Solution growth of high-quality SiC crystals: “FZU AV CR Silicon Single Crystal C” Mojmir Churavy / CC BY-SA 4.0 (cropped)
- Related lab (NGKアドバンストナノマテリアル産学協同研究部門): “183483main MSRR-11” NASA / Public domain (cropped)
- Related lab (Photo electron Soul GaN電子ビームデバイス産学協同研究部門): “Plessey Semiconductors Ltd GaN-on-Silicon microLED arrays on wafer” Palee93 / CC BY-SA 4.0 (cropped)
- Related lab (三菱ケミカルGaN基板デバイス産学協同研究部門): “Cem Bascer 190206-N-NO204-765” QROMIS / Public domain (cropped)
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