Toyota Central R&D Labs GaN Power Device Industry-Academia Joint Research Division Lab

AboutAbout the lab

Studying GaN power devices from four perspectives.

The Toyota Central R&D Labs GaN Power Device Industry-Academia Joint Research Division is one of the industry-academia joint research divisions at the Institute of Materials and Systems for Sustainability, Nagoya University, and studies GaN power devices.
Research proceeds from four perspectives: crystal growth, gate insulator films and interfaces, processes such as processing and ion implantation, and device design.
The page includes figures showing a vertical trench GaN device and the Hall mobility of a lightly doped n-type epitaxial layer.

MembersFaculty

• Project ProfessorKenji Ito
• Project ProfessorMasakazu Kanechika

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