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Nano Spin Devices Lab
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A lab that uses the spin of electrons to build energy-efficient, high-performance devices.
AboutAbout the lab
From nanospin structures to spintronic devices.
The lab researches spintronics, which uses the electron's "spin," and nanospin devices.
Spintronics, which uses both the charge and the spin of electrons, is expected to give rise to new devices such as magnetic memory and highly sensitive magnetic sensors.
Such devices require nanoscale structures, and the lab studies everything from fabricating them to using them in devices.
The lab is equipped with facilities for fabricating, processing, and measuring devices, an environment where students can turn their own ideas into reality.
Key terms
- Spintronics
- Electronics that uses not only the charge of electrons but also the property of the tiny magnet they carry (spin).
- Magnetization switching
- Reversing the orientation of a magnet (north and south poles). In magnetic memory, this is how 0 and 1 are rewritten.
- Magnetoresistance effect
- A phenomenon in which the electrical resistance of a material changes depending on the strength of a magnetic field or the orientation of a magnet.
NewsLab news
A student received the Student Presentation Award (Sakurai Presentation Award) and a Poster Award at the 50th Annual Conference of the Magnetics Society of Japan
Results of joint research published in Applied Physics Letters
Research results published in Journal of Applied Physics
Research results published in Journal of Magnetism and Magnetic Materials
Results of joint research with the National Institute for Materials Science published in Journal of Magnetism and Magnetic Materials
ResearchResearch themes
The lab conducts research related to spin electronics and nanomagnetics. Aiming at higher-performance, more energy-efficient information devices, it studies everything from fabricating nanospin structures to applying them in devices such as memory and magnetic sensors.
*Illustrative imageEfficient writing for magnetic memory
The lab studies write methods for magnetic random access memory (MRAM), which records information in magnetic materials. It investigates heat-assisted spin-transfer torque (STT) magnetization switching and faster spin-orbit torque (SOT) magnetization switching in the multilayer films it fabricates.
*Illustrative imageObserving magnetization dynamics with ultrashort pulsed lasers
The lab investigates the motion of the angular momentum of electrons that gives rise to magnetization (spin dynamics) using a measurement system based on ultrashort pulsed lasers. The values obtained are used in developing materials for magnetic devices that operate at ultrahigh speed.
*Illustrative imageHighly sensitive magnetic sensors
Using sensors based on the magnetoresistance effect, the lab aims for sensitivity comparable to superconducting SQUID sensors. It proposes sensors based on domain wall motion and feedback-type sensors that are robust against external disturbances.
*Illustrative imageNanospin structures made by ion irradiation
This research changes the structure of magnetic thin films by ion irradiation, locally modifying magnetism at the nanoscale. The lab aims to apply it to bit-patterned media, a next-generation hard disk technology, and to spintronic devices.
MembersFaculty
The lab's members consist of faculty, researchers, international special researchers, joint researchers, technical assistants, administrative assistants, and doctoral, master's, and undergraduate students.As of 2026
- ProfessorTakeshi Kato
- Associate ProfessorDaiki Oshima
- Project LecturerAnna Honda
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Spintronic Devices ( )” National Institute of Standards and Technology / Public domain (cropped)
- Efficient writing for magnetic memory: “Spin-Torque MRAM ( )” Steve Jurvetson from Los Altos, USA / CC BY 2.0 (cropped)
- Observing magnetization dynamics with ultrashort pulsed lasers: “The inner optical setup of a femtosecond Titanium-Sapphire Pulsed laser” Aksy88 / CC BY-SA 4.0 (cropped)
- Highly sensitive magnetic sensors: “MSS1 CDSM flight model” A. Pollinger / CC BY 4.0 (cropped)
- Nanospin structures made by ion irradiation: “Seagate ST33232A hard disk inner view” Eric Gaba (Sting - fr:Sting) This image was created with CombineZP by 11 ( It was created out of 11 single images.). / CC BY-SA 3.0 (cropped)
- Related lab (ナノ電子デバイス研究グループ): “Hukseflux flexible heat flux sensor FHF04 with incorporated temperature sensor” Hukseflux TS / CC BY-SA 4.0 (cropped)
- Related lab (機能性・
エネルギー材料工学研究グループ): “Levitating HTS BSCCO piece (Meissner effect)” Winiar / CC BY-SA 3.0 (cropped) - Related lab (エネルギー制御工学
（S） 研究グループ): “Silicon heterojunction solar cell” Radiotrefoil / CC BY-SA 4.0 (cropped) - Related lab (プラズマエレクトロニクス研究グループ): “Bell Jar 35 with Argon Plasma” Diener electronic GmbH + Co KG / CC BY-SA 4.0 (cropped)
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