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Nanostructure Control Lab
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A lab that studies nanoelectronics and semiconductor processes.

AboutAbout the lab
Exploring the ultra-small world and the new materials of the future.
The Nanostructure Control Lab studies nanoelectronics, semiconductor processes, and gate dielectrics technology.
On the research page, the SiO2 group is introduced with "Dreams. Adventure. Welcome to the ultra-small world!" and the SiC group with "New materials for the future, taking on the energy problem."
The researcher profile of the lab's faculty member lists SiC, Si, SiO2, and reliability as research keywords.
The lab's website also introduces it under the name "Yamabe-Hasunuma Lab," but the content of the site dates from around 2017.
Key terms
- Gate dielectrics
- The part of a semiconductor device such as a transistor that serves as a thin film that does not conduct electricity
- SiC
- Silicon carbide. One of the new materials known as wide-bandgap semiconductors.
- SiO2
- Silicon dioxide. It is studied as a thin film for use as an insulating layer.
ResearchResearch themes
The Nanostructure Control Lab's research fields are nanoelectronics, semiconductor processes, and gate dielectrics technology. Its research keywords include SiC, Si, SiO2, and reliability, and its research page introduces a SiO2 group and a SiC group.
View More ↗MembersFaculty
The lab's members consist of faculty, doctoral, master's, and undergraduate students, and research students.As of 2017
- Associate ProfessorRyu Hasunuma
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “К155ИР32” Nikolai Bulykin / CC BY-SA 4.0 (cropped)
- Related lab (電子スピン共鳴分光): “Electron spin resonance spectroscopy” Bill Branson (Photographer) / Public domain (cropped)
- Related lab (パワーエレクトロニクス): “Micro-electric T3000 - board - National Semiconductor LM386N-0694” Raimond Spekking / CC BY-SA 4.0 (cropped)
- Related lab (計算物性物理学): “Carbon nanotube zigzag povray” Arnero / Public domain (cropped)
- Related lab (半導体材料): “4 inch float zone n-type silicon wafer with amorphous silicon thin film heterojunction structure” Radiotrefoil / CC BY-SA 4.0 (cropped)
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