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Electron Spin Resonance Spectroscopy Lab
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A lab that uses electron spin resonance to investigate crystal defects inside semiconductor devices.
AboutAbout the lab
Finding defects in semiconductors with electron spin.
The Umeda Lab (Electron Spin Resonance Spectroscopy Lab) uses electron spin resonance (ESR) to research and develop low-power electronic materials.
ESR makes it possible to examine crystal defects, the abnormal sites in a material, in detail.
These abnormal sites cause extra current and power consumption in devices, so if they can be reduced or controlled, low-power devices can be made.
The lab works with private companies and external research institutions to investigate abnormal sites inside a variety of devices.
Key terms
- Electron spin resonance (ESR)
- An experimental method for observing electron spins in materials. It is especially powerful for investigating crystal defects and impurity atoms in semiconductors and similar materials
- Crystal defect
- A place where the arrangement of atoms in the crystal lattice is disordered. It is a source of the energy levels that determine the properties of a semiconductor
- EDMR
- Electrically detected magnetic resonance, a form of ESR that detects current. It can measure the inside of tiny devices of micrometer to nanometer size
- SiC
- Silicon carbide. It is being actively researched as a semiconductor material to replace silicon
ResearchResearch themes
The lab investigates crystal defects and impurity atoms in materials such as semiconductors using electron spin resonance spectroscopy. In addition to conventional ESR, it also uses electrically detected ESR (EDMR), which can measure tiny devices of micrometer to nanometer size.
*Illustrative imageObserving defects with electron spin
Using ESR, which observes electron spins in materials, the lab examines the energy levels and carriers that determine the properties of semiconductors and insulators. ESR is especially powerful when you want to know what kind of crystal defects or impurity atoms are present.
*Illustrative imageInvestigating the inside of tiny devices
Using EDMR, the lab investigates the inside of tiny devices for which conventional ESR does not have enough sensitivity. The lab believes that if defects can be controlled well, the low-power performance of memory can still be improved.
*Illustrative imageInterface defects in SiC power devices
In SiC power devices, the large number of interface defects at the SiC/SiO2 interface holds back performance improvements. The lab applies ESR and EDMR to this interface to identify what these defects actually are.
MembersFaculty
Members of the Umeda Lab consist of faculty and students in the doctoral, master's, and undergraduate programs.As of 2026
- Associate ProfessorTakahide Umeda
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Electron spin resonance spectroscopy” Bill Branson (Photographer) / Public domain (cropped)
- Observing defects with electron spin: “Laboratory of electron spectroscopy” Dominik Bejma, Marta Kowalkińska / CC BY 4.0 (cropped)
- Investigating the inside of tiny devices: “Silicon chip from a computer laser mouse under a microscope 50х” Original: Alexander Klepnev Derivative work: IamMM / CC BY-SA 4.0 (cropped)
- Interface defects in SiC power devices: “Nedap ESD1 - power supply board 1 - ON Semiconductor U” Raimond Spekking / CC BY-SA 4.0 (cropped)
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