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先進ナノ電子材料研究室
Showing the original Japanese · View translation
原子から半導体を積み上げて、ナノワイヤで新しい電子材料をつくる研究室。
AboutAbout the lab
半導体を原子から積み上げ、新しい電子材料を。
先進ナノ電子材料研究室は、
物質は
分子線エピタキシーの
2022年4月に
Key terms
- エピタキシャル成長
- 土台と
なる 結晶の 上に、 原子の 並びを そろえて 新しい 結晶の 層を 積み上げていく 方法 - 分子線エピタキシー
- 真空の
中で 原料の 原子や 分子を 土台に 吹き付け、 1層ずつ結晶を 育てる 方法 - ナノワイヤ
- 太さが
ナノメートルほどの 細い 針状の 結晶。 大きな 結晶には ない 性質を 示す
NewsLab news
修士課程の
学生が、 ナノ構造・ エピタキシャル成長講演会で 発表奨励賞を 受賞 博士課程の
学生の 論文が Crystal Growth and Design に 掲載 ローマ・サピエンツァ大学との
共同研究論文が Small に 掲載 博士課程の
学生の 論文が Journal of Applied Physics に 掲載 博士課程の
学生が、 応用物理学会講演奨励賞を 受賞
ResearchResearch themes
光の
*Illustrative imageシリコン基板の上に大量のナノワイヤ
光を
*Illustrative image窒素やビスマスを混ぜたナノワイヤ
GaAsに
*Illustrative image半導体と酸化物を組み合わせたナノワイヤ
化合物半導体と
MembersFaculty
先進ナノ電子材料研究室の
- Professor石川 史太郎
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Molecular beam epitaxy system” ENERGY.GOV / Public domain (cropped)
- シリコン基板の
上に 大量の ナノワイヤ: “Gallium Arsenide (GaAs) 2" wafer” La2O3 / CC BY-SA 3.0 (cropped) - 窒素や
ビスマスを 混ぜた ナノワイヤ: “Dark nanowire forrest” JohannesHolm / CC BY-SA 4.0 (cropped) - 半導体と
酸化物を 組み合わせた ナノワイヤ: “White LEDs ZnSe (1)” Chemicalinterest / CC0 (cropped) - Related lab (集積電子デバイス研究室): “Gold Nano Anchors Put Nanowires in Their Place ( )” National Institute of Standards and Technology / Public domain (cropped)
- Related lab (集積ナノシステム研究室): “Нейрон коры с множеством дендритных шипиков” Sergb95 / CC BY-SA 4.0 (cropped)
- Related lab (コヒーレント光研究分野): “SACLA Undulator” SRIA / CC BY-SA 4.0 (cropped)
- Related lab (ナノ電子デバイス学研究室): “CMOS magnetische Blasendomänen” Matesy GmbH / CC BY-SA 3.0 (cropped)
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