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Integrated Electronic Devices Lab
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The lab grows semiconductor nanowires to create next-generation devices.
AboutAbout the lab
Growing nanowires to control electrons and light
The Integrated Electronic Devices Lab studies selective-area growth and nanowire growth of III-V compound semiconductors by metal-organic vapor phase epitaxy (MOVPE).
The lab covers the whole chain of work in one continuous line, from growing new materials to three-dimensional processing technology, device applications, and integration technology.
By controlling the behavior of electrons and light with heterostructures of semiconductor nanowires, the lab aims to integrate high-performance, low-power switching circuits and highly functional optical devices.
The lab is one of the labs of the Research Center for Integrated Quantum Electronics.
Key terms
- Nanowire
- A long, thin crystal about one-thousandth the width of a human hair. It serves as a pathway for electrons and light.
- Crystal growth
- Growing a crystal with the desired properties by arranging atoms in a regular order.
- Heterostructure
- A structure made by stacking different types of semiconductors. It makes it possible to design how electrons and light move.
NewsLab news
View More ↗ResearchResearch themes
Centered on selective-area growth and nanowire growth of III-V compound semiconductors by metal-organic vapor phase epitaxy (MOVPE), the lab conducts comprehensive research from crystal growth of new materials to three-dimensional processing, device applications, and integration technology. It aims to control the behavior of electrons and light with nanowire heterostructures and to link this to integrated applications.
*Illustrative imageCrystal Growth of Nanowires
Using metal-organic vapor phase epitaxy (MOVPE), the lab works on selective-area growth, in which III-V compound semiconductors are grown only at targeted locations, and on nanowire growth. Making new materials is the starting point of the research.
*Illustrative imageNanowire Device Process Applications
The lab studies process technology for three-dimensionally fabricating grown nanowires and its application to devices. It aims to lead to high-performance, low-power switching circuits and highly functional optical devices.
*Illustrative imageNext-Generation Quantum Integrated Systems and Photonics
The lab controls the behavior of electrons and light with heterostructures of semiconductor nanowires to create integrated applications. It works on next-generation photonic nano light sources, display light sources, and three-dimensional quantum integrated circuits.
MembersFaculty
The members of the Integrated Electronic Devices Lab are faculty and students in the doctoral, master's, and undergraduate programs.As of 2025
- ProfessorJunichi Motohisa
- ProfessorKatsuhiro Tomioka
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Gold Nano Anchors Put Nanowires in Their Place ( )” National Institute of Standards and Technology / Public domain (cropped)
- Crystal Growth of Nanowires: “Nanowire rainbow” JohannesHolm / CC BY-SA 4.0 (cropped)
- Nanowire Device Process Applications: “Partially etched silicon dioxide via Nomarski DIC” Richstraka / CC BY-SA 3.0 (cropped)
- Next-Generation Quantum Integrated Systems and Photonics: “InGaN-based green LED” Mister rf / CC BY-SA 4.0 (cropped)
- Related lab (Advanced Nano-Electronic Materials Lab): “Molecular beam epitaxy system” ENERGY.GOV / Public domain (cropped)
- Related lab (Nano Material Properties Engineering Lab): “Stretchable Electronics” Steve Jurvetson from Menlo Park, USA / CC BY 2.0 (cropped)
- Related lab (Neural Control Engineering Lab): “Auditory Cortex Frequency Mapping” Chittka L, Brockmann / CC BY-SA 2.5 (cropped)
- Related lab (Integrated Nanosystems Lab): “Нейрон коры с множеством дендритных шипиков” Sergb95 / CC BY-SA 4.0 (cropped)
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