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Advanced Nano-Electronic Materials Lab
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The lab builds semiconductors up from atoms to create new electronic materials using nanowires.
AboutAbout the lab
Building semiconductors atom by atom to create new electronic materials.
The Advanced Nano-Electronic Materials Lab studies new electronic materials using "epitaxial growth," in which semiconductor crystals are built up layer by atomic layer.
When materials reach the nanometer scale, they show properties different from those they have at visible sizes.
Building on molecular beam epitaxy, the lab makes semiconductor materials such as "nanowires," needle-shaped crystals that take advantage of these size effects.
The lab was founded in April 2022, and its master's and doctoral students actively present at international conferences and write papers.
Key terms
- Epitaxial growth
- A method of building up a new crystal layer on top of a base crystal, with the atomic arrangement aligned to it
- Molecular beam epitaxy
- A method of growing a crystal one layer at a time by spraying atoms or molecules of the source material onto a substrate in a vacuum
- Nanowire
- A thin, needle-shaped crystal with a thickness of about a nanometer scale. It shows properties that large crystals do not have
NewsLab news
A master's student received the Presentation Encouragement Award at the Nanostructures and Epitaxial Growth Lecture Meeting
A paper by a doctoral student was published in Crystal Growth and Design
A paper from joint research with Sapienza University of Rome was published in Small
A paper by a doctoral student was published in Journal of Applied Physics
A doctoral student received the Japan Society of Applied Physics Young Scientist Presentation Award
ResearchResearch themes
The lab uses molecular beam epitaxy to assemble III-V compound semiconductors, which excel at interacting with light, from the atomic level. It aims to surpass current performance and open up nanoscale semiconductor materials that will lead the next generation.
*Illustrative imageMassive numbers of nanowires on a silicon substrate
When growing GaAs crystals, which convert light into electricity with high efficiency, the lab took advantage of the property that Ga acts as its own catalyst. It succeeded in growing needle-shaped GaAs nanowires across the entire surface of a 2-inch silicon substrate. Because the nanowires absorb almost all light, the surface looks pitch black.
*Illustrative imageNanowires mixed with nitrogen and bismuth
Crystals of GaAs mixed with nitrogen or bismuth are predicted to greatly improve emission efficiency and temperature stability at the wavelengths used in optical communications. The lab succeeded in making crystals of these nanowires for the first time, and also achieved laser oscillation in GaNAs nanowires.
*Illustrative imageNanowires combining semiconductors and oxides
The lab combines compound semiconductors and oxides to make nanowires that have the characteristics of both. It found that nanowires made of stacked GaAs and oxide emit a distinctive white light, and showed their potential as a new white light source.
MembersFaculty
The members of the Advanced Nano-Electronic Materials Lab consist of faculty, and doctoral, master's, and undergraduate students.As of 2026
- ProfessorFumitaro Ishikawa
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Molecular beam epitaxy system” ENERGY.GOV / Public domain (cropped)
- Massive numbers of nanowires on a silicon substrate: “Gallium Arsenide (GaAs) 2" wafer” La2O3 / CC BY-SA 3.0 (cropped)
- Nanowires mixed with nitrogen and bismuth: “Dark nanowire forrest” JohannesHolm / CC BY-SA 4.0 (cropped)
- Nanowires combining semiconductors and oxides: “White LEDs ZnSe (1)” Chemicalinterest / CC0 (cropped)
- Related lab (Integrated Electronic Devices Lab): “Gold Nano Anchors Put Nanowires in Their Place ( )” National Institute of Standards and Technology / Public domain (cropped)
- Related lab (Integrated Nanosystems Lab): “Нейрон коры с множеством дендритных шипиков” Sergb95 / CC BY-SA 4.0 (cropped)
- Related lab (Coherent Light Lab): “SACLA Undulator” SRIA / CC BY-SA 4.0 (cropped)
- Related lab (Nanoelectronic Devices Lab): “CMOS magnetische Blasendomänen” Matesy GmbH / CC BY-SA 3.0 (cropped)
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