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Sakizaki Lab
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A lab that uses data to uncover the relationship between crystal defects and lifetime in power semiconductors.
AboutAbout the lab
Measuring defects to build semiconductors that can be used with confidence
Sakizaki Lab studies how crystal defects inside wafers affect the performance and lifetime of devices in next-generation power semiconductors, such as SiC and GaN.
Using state-of-the-art measurement technology and advanced data analysis to visualize crystal defects, the lab aims to integrate wafer quality evaluation with device reliability evaluation and lifetime prediction.
Research is conducted at the National Institute of Advanced Industrial Science and Technology (AIST).
Students can join this lab from the graduate school level.
Key terms
- Power semiconductor
- A semiconductor increasingly in practical use in applications such as inverters for electric vehicles, power conversion equipment for railway vehicles, power conditioners for renewable energy, and 5G base stations.
- SiC
- Silicon carbide. Along with GaN (gallium nitride), it is a leading material for next-generation power semiconductors.
- Crystal defect
- A defect that exists inside a semiconductor wafer. It causes lower device yield and degradation of reliability over long-term use.
ResearchResearch themes
The obstacle to deploying next-generation power semiconductors in society is the inability to explain, quantitatively and reproducibly, how much and by what mechanism crystal defects affect device yield, reliability, and lifetime. This lab systematically collects data ranging from wafer quality to device electrical characteristics, reliability tests, and module characteristics, and is building a database and analysis platform that handles defects, characteristics, and degradation behavior across all of these.
A database linking defects and degradation
The lab systematically accumulates data ranging from wafer quality and device electrical characteristics to reliability test results and module characteristics. It is building a comprehensive database, together with an analysis platform, that handles the behavior of defects, characteristics, and degradation across all of these.
*Illustrative imageAnalysis that predicts yield from wafer quality
The lab is developing an analysis solution that links wafer quality data and device yield and reliability data, collected before and after device prototyping, in the same framework, so that integrated analysis is possible simply by inputting data. Beyond predicting yield, it aims to contribute to understanding of manufacturing processes, for example by detecting signs of the condition of mass-production lines from changes in prediction accuracy.
*Illustrative imageLifetime prediction based on degradation mechanisms
Focusing on the reliability degradation specific to next-generation power semiconductor devices, the lab works on building lifetime prediction test methods grounded in degradation mechanisms. It proposes methods that, based on the physics of degradation, connect accelerated test conditions with actual use conditions, aiming both to advance reliability testing and to shorten test times.
MembersFaculty
- Affiliated ProfessorSumihisa Sakizaki
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Emerson Network Power 7001232-J200 - National Semiconductor LM340T5-93496” Raimond Spekking / CC BY-SA 4.0 (cropped)
- Analysis that predicts yield from wafer quality: “Wafer 20110212” Sangitiana Fararano / CC BY-SA 2.0 (cropped)
- Lifetime prediction based on degradation mechanisms: “MITSUBISHI IGBT module” Sthdhk / CC BY-SA 4.0 (cropped)
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