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Nagashio Lab
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A lab working toward next-generation electronic devices using atomically thin, sheet-like crystals.
AboutAbout the lab
Atomically thin materials for next-generation electronics.
The Nagashio Lab studies atomically thin "two-dimensional layered materials," such as graphene, for use in electronic devices.
The lab aims to understand the properties unique to graphene and to bring out those properties in working devices.
Other materials that are likewise made of atomic layers, such as h-BN and MoS2, are also studied.
By stacking different layers, the lab aims to bring out the functions unique to interfaces that are atomically flat.
Key terms
- Two-dimensional layered materials
- Materials made of sheets of atoms bonded in a plane, stacked together by weak forces. They can be peeled into thin layers for use
- Graphene
- An atomically thin sheet of carbon atoms arranged in a honeycomb-like hexagonal pattern
- Tunnel FET
- A type of transistor that switches current using quantum tunneling, in which electrons pass through a barrier
NewsLab news
A master's student received the Presentation Award from the Japan Society of Applied Physics
A master's student received the Outstanding Master's Thesis Award from the Department of Materials Engineering
A student received the Young Researcher Award at the 2.5-Dimensional Materials Science Area Meeting
Assistant Professor Kanahashi received the Young Researcher Award from the Fullerenes, Nanotubes and Graphene Research Society
Assistant Professor Kanahashi received the Presentation Award from the Japan Society of Applied Physics
ResearchResearch themes
The lab studies how to use atomic-layer materials such as graphene, MoS2, and h-BN in next-generation electronic devices. Its work ranges from crystal growth and evaluation of how current flows, to the operation of devices built by stacking layers.
*Illustrative imageTunnel FETs Based on 2D Materials
Tunnel FETs can lower power consumption, but they have the weakness of carrying only a small current. The lab studies tunnel FETs that use structures made by stacking two-dimensional layered materials (joint research with Saitama University and NIMS).
*Illustrative imageGrowth of MoS2 and How Current Flows in It
MoS2 is a two-dimensional layered material that has also drawn attention as an optical device material when thinned to a single layer. The lab investigates how defects in the crystal affect the way current flows.
*Illustrative image2D SnS for Energy Harvesting
Theory predicts that monolayer SnS (tin sulfide) has a large piezoelectricity, meaning it generates electricity when force is applied. The lab grew thin crystals and demonstrated in-plane ferroelectricity (joint research with NIMS and Saitama University).
*Illustrative imageDielectric Breakdown of h-BN and Power Devices
h-BN is considered an ideal insulating substrate on which to place two-dimensional materials. The lab examined how its insulation fails when voltage is applied, and showed that it breaks down one layer at a time, starting from the top layer (joint research with NIMS).
MembersFaculty
The members of the Nagashio Lab consist of faculty, technical specialists, a secretary, and doctoral, master's, and undergraduate students.As of 2026
- ProfessorKosuke NagashioPublications ↗
- Assistant ProfessorKaito KanahashiPublications ↗
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Graphen” AlexanderAlUS / CC BY-SA 3.0 (cropped)
- Tunnel FETs Based on 2D Materials: “Graphene exfoliated 2014Apr04 Harlequin Mantis” Harlequin Mantis / CC BY-SA 4.0 (cropped)
- Growth of MoS2 and How Current Flows in It: “Molybdenite quebec2” Didier Descouens / CC BY 3.0 (cropped)
- 2D SnS for Energy Harvesting: “SnS2-bas” Ktlabe / Public domain (cropped)
- Dielectric Breakdown of h-BN and Power Devices: “Boron-nitride-(hexagonal)-side-3D-balls” Benjah-bmm27 / Public domain (cropped)
- Related lab (Uchida-Toyoshima Lab): “Silicon wafer close view” Le hollandais volant / CC BY 4.0 (cropped)
- Related lab (Shimogaki Lab): “Multicrystalline silicon wafer with thin film iridescence” Radiotrefoil / CC BY-SA 4.0 (cropped)
- Related lab (Narumi Lab (Solidification Process Engineering)): “In-stream inoculation addition while molten cast iron is poured to a green sand mold in a foundry in Bangladesh” Sm faysal / CC BY-SA 4.0 (cropped)
- Related lab (Kita Lab): “SiC wafers 6inch” FDominec / CC BY-SA 4.0 (cropped)
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