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Kita Lab
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The lab controls the interfaces of electronic devices to contribute to an energy-saving society.
AboutAbout the lab
Designing devices from the nanoscale of the interface.
Kita Lab studies the phenomena that occur in the immediate vicinity of interfaces, where the materials of an electronic device meet.
The lab aims to design device functions by controlling the structure and properties of this region.
Its targets include next-generation power devices that convert electric power efficiently, and advanced electronics that run on little power.
To help make society more energy-efficient, the lab proposes new technologies and works to demonstrate them.
Key terms
- Interface
- The boundary region where two different materials are in contact
- Power device
- A semiconductor component used in electrical equipment to convert voltage or current
- Gate dielectric
- A thin electrically insulating film placed in a transistor between the semiconductor and the electrode (the gate) that switches the current on and off
- Ferroelectricity
- The property of retaining an electrical bias (polarization) even without an applied voltage, with its direction reversible by applying a voltage
NewsLab news
A doctoral student received the Presentation Encouragement Award at the Workshop on Electron Device Interface Technology
Assistant Professor Tamura received the Best Paper Award at IWDTF
A doctoral student received the Young Researcher Award at IWDTF
ResearchResearch themes
The lab aims to advance materials science to innovate next-generation electronic devices, and through it to contribute to an energy-saving society. It works on controlling material properties in the nanoscale region of the interfaces formed by device materials, and on developing the key technologies needed to put devices into practical use.
*Illustrative imageImproving the Performance of SiC Power Devices
The lab develops techniques to reduce defects formed at the interface between SiC (silicon carbide) and the insulating film. By controlling process conditions, it investigates ways to remove carbon, a cause of these defects, from the interface.
*Illustrative imageFundamental Technologies for Gallium Oxide Devices
The lab studies techniques for forming high-quality insulating films on gallium oxide (β-Ga2O3), a promising material for next-generation power devices, and techniques for controlling the properties of the resulting interface.
*Illustrative imagePhysics of Gate Dielectric Interfaces
The lab investigates the origin of the "interface dipole effect" that appears at interfaces between different oxides. It aims to establish control guidelines for finely tuning the operation of cutting-edge transistors.
*Illustrative imageNanometer-Thick Ferroelectric Thin Films
The lab fabricates HfO2 and HfZrOx thin films, which exhibit ferroelectricity at nanometer-scale thickness, by atomic layer deposition (ALD), and works on designing stacked structures and controlling crystallization.
MembersFaculty
The members of Kita Lab are faculty and students in the doctoral, master's, and undergraduate programs.As of 2026
- ProfessorKoji KitaPublications ↗
- Assistant ProfessorAtsushi TamuraPublications ↗
- Project Assistant ProfessorShunjie Yu
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Nagashio LabFaculty of Engineering, Department of Materials EngineeringCrystal growth, electronic transport properties, and device …The information on this page is compiled by the LabLog team from the lab's public information and interviews. For corrections or removal requests, please contact LabLog, not the lab.
Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “SiC wafers 6inch” FDominec / CC BY-SA 4.0 (cropped)
- Improving the Performance of SiC Power Devices: “Bulk Silicon Carbide Crystal” LaMèreVeille / CC BY-SA 4.0 (cropped)
- Fundamental Technologies for Gallium Oxide Devices: “Wafer - 2” Windell Oskay / CC BY 2.0 (cropped)
- Physics of Gate Dielectric Interfaces: “Silicon chip from a computer laser mouse under a microscope 50х” Original: Alexander Klepnev Derivative work: IamMM / CC BY-SA 4.0 (cropped)
- Nanometer-Thick Ferroelectric Thin Films: “Hf-crystal bar” Alchemist-hp (www.pse-mendelejew.de) / CC BY-SA 3.0 de (cropped)
- Related lab (Shimogaki Lab): “Multicrystalline silicon wafer with thin film iridescence” Radiotrefoil / CC BY-SA 4.0 (cropped)
- Related lab (Uchida-Toyoshima Lab): “Silicon wafer close view” Le hollandais volant / CC BY 4.0 (cropped)
- Related lab (Kondo Lab): “Perovskite solar cell” Dennis Schroeder / National Renewable Energy Laboratory / Public domain (cropped)
- Related lab (Nagashio Lab): “Graphen” AlexanderAlUS / CC BY-SA 3.0 (cropped)
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