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半導体物性工学
Showing the original Japanese · View translation
半導体の限界を打ち破り、省エネの未来をつくる。

AboutAbout the lab
半導体の限界を、打ち破る。
半導体物性工学研究室
あらゆる
サイエンスと
Key terms
- ワイドギャップ半導体
- シリコンより
禁制帯幅(バンドギャップ)が 広く、 高い 電圧や 温度に 強い半導体。 SiCや GaNなど - パワーデバイス
- 電力を
変換・ 制御する ための 半導体素子 - MEMS
- 半導体の
微細加工技術で つくる、 超小型の 機械部品や センサー
ResearchResearch themes
ワイドギャップ半導体SiC・GaNの
*Illustrative imageSiC・GaNのパワーデバイス
禁制帯幅の
*Illustrative imageナノワイヤのトランジスタ
太さが
*Illustrative image抵抗変化で速く小さなメモリ
酸化物を
*Illustrative image過酷な環境で動くセンサー
半導体の
MembersFaculty
半導体物性工学研究室の
- Professor木本 恒暢
- Associate Professor金子 光顕
- Assistant Professor三上 杏太
VoicesStudent voices
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電磁エネルギー工学工学部 電気電子工学科計算電磁気学のThe information on this page is compiled by the LabLog team from the lab's public information and interviews. For corrections or removal requests, please contact LabLog, not the lab.
Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Rounded Silicon Carbide Ingot” LaMèreVeille / CC BY-SA 4.0 (cropped)
- SiC・GaNの
パワーデバイス: “IGBT 2441” Daniel*D / CC BY-SA 3.0 (cropped) - ナノワイヤの
トランジスタ: “Nanowires that Emit UV Light ( )” National Institute of Standards and Technology / Public domain (cropped) - 抵抗変化で
速く 小さな メモリ: “M27c322-100f1 EPROM chip” Engine9 / CC BY-SA 4.0 (cropped) - 過酷な
環境で 動く センサー: “MEMS Microcantilever in Resonance” Patrick C. Fletcher / CC BY-SA 3.0 (cropped) - Related lab (低電力集積回路デザイン): “Mpw4-top-HD” Zeptobars; Mikhail Svarichevsky / CC BY 3.0 (cropped)
- Related lab (集積コンピューティング): “286 AT motherboard” Mister rf / CC BY-SA 4.0 (cropped)
- Related lab (知的回路設計): “Close-up of a VHS Player Circuit Board 2” DiscoA340 / CC0 (cropped)
- Related lab (電磁エネルギー工学): “Cut-away version of an electric motor (1)” S.J. de Waard / CC BY 2.5 (cropped)
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