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Next-Generation Nitride Semiconductors (Pristovsek Lab)
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The lab explores LEDs and electronic devices through gallium nitride crystals and devices.
AboutAbout the lab
Exploring new possibilities of gallium nitride.
The Pristovsek Lab studies new uses of gallium nitride (GaN), a semiconductor.
GaN is most widely used in light-emitting diodes (LEDs), and the lab explains that GaN electronic devices could enable smaller, more efficient power converters.
GaN is also at the core of 5G communications, and the lab explains that future 6G will not work without new GaN electronic devices.
The lab is a research group in the International Visiting Division of the Center for Integrated Research of Future Electronics (CIRFE) at the Institute of Materials and Systems for Sustainability, and its website is written in English.
Key terms
- Gallium nitride
- A semiconductor made of gallium and nitrogen. It is widely used as a material for light-emitting diodes (LEDs)
- Nitrogen polarity
- A state in which the orientation of a GaN crystal is flipped from the usual gallium polarity. The internal electric field is flipped as well
- Semipolar
- An orientation in which a GaN crystal is tilted for use. Polarization (the electrical imbalance inside the crystal) becomes weaker
ResearchResearch themes
The internal electric field of a gallium nitride (GaN) crystal changes depending on its orientation. Using GaN in different orientations, tiny LEDs, and the new material AlPN, the lab studies devices such as LEDs and transistors.
*Illustrative imageNitrogen-polar devices
GaN is normally grown Ga-polar, but flipping the orientation also flips the internal electric field. Nitrogen-polar GaN and AlN are described as well suited to transistors that operate faster and at higher voltages, and to deep-ultraviolet light sensors.
*Illustrative imageSemipolar LEDs with tilted crystals
In semipolar orientations, where the GaN crystal is tilted, polarization is weaker, which may raise LED efficiency in high-current-density applications such as VR displays. In the special (10-13) orientation, the lab demonstrated semipolar LEDs that outperform commercial Ga-polar LEDs.
*Illustrative imageMicro-LED efficiency
Tiny LEDs less than 20 µm wide are in demand for VR displays. However, efficiency drops as LEDs get smaller, which is thought to be caused by surface recombination at the sidewalls. The lab aims to understand this mechanism from the fundamental properties of light emission and to find ways to reduce it.
*Illustrative imageDevices made with the new material AlPN
AlPN is a new group III nitride semiconductor made by combining aluminum with phosphorus and nitrogen, and the lab was the first in the world to make it, in 2020. The lab studies it together with many groups as a material for high-speed, high-power transistors for long-range electric vehicles and for enabling next-generation wireless networks.
MembersFaculty
The members of the Pristovsek Lab consist of faculty and master's students.
- Project ProfessorMarkus Pristovsek
- Assistant ProfessorXu Yang
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Semiconductor laboratory component” Tourbillon / CC BY-SA 3.0 (cropped)
- Nitrogen-polar devices: “FBH GaN High electron mobility transistor” FBH/P.Immerz / CC BY-SA 4.0 (cropped)
- Semipolar LEDs with tilted crystals: “Blue LED light” Common Member code specialist / CC BY-SA 4.0 (cropped)
- Micro-LED efficiency: “L.E.D. lighting array - geograph.org.uk - 3682793” Neil Owen / CC BY-SA 2.0 (cropped)
- Devices made with the new material AlPN: “SiC wafers 6inch” FDominec / CC BY-SA 4.0 (cropped)
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（中部電力） 寄附研究部門): “Marchwood National Grid Substation - geograph.org.uk - 1107752” Peter Facey / CC BY-SA 2.0 (cropped) - Related lab (UJ-Crystal超
高品質SiC半導体産学協同研究部門): “Silicon-carbide-3D-balls” 作者不詳 / Public domain (cropped) - Related lab (Photo electron Soul GaN電子ビームデバイス産学協同研究部門): “Plessey Semiconductors Ltd GaN-on-Silicon microLED arrays on wafer” Palee93 / CC BY-SA 4.0 (cropped)
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