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High-Frequency Circuits Lab
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A lab that makes the high-frequency circuits supporting wireless communication and power transmission highly efficient.
AboutAbout the lab
Efficient radio transmission and reception through circuit design
The High-Frequency Circuits Lab (Hara Lab) studies how to improve the performance and efficiency of microwave and millimeter-wave circuits used in radio transmitter and receiver sections, including antennas.
In high-capacity, high-speed wireless communication and in energy transmission using radio waves, the challenge is to achieve both comfort and lower energy consumption.
The lab aims to bring out performance through new circuit architectures and design methods, rather than relying on device miniaturization alone.
In the research introduction poster on the website of the Institute of Materials and Systems for Sustainability, the lab is presented as "CIRFE, Microwave Lab."
Key terms
- MMIC
- Short for Monolithic Microwave IC. An integrated circuit with microwave or millimeter-wave circuits built in
- Wireless power transfer
- A mechanism for sending energy by radio waves. The power amplifier on the transmitting side and the rectifier on the receiving side determine the efficiency of transmission and reception
- Rectifier
- A circuit on the receiving side that converts the received radio waves (RF) into direct current (DC)
ResearchResearch themes
The lab studies microwave and millimeter-wave circuits in radio transmitter and receiver sections, which greatly influence the performance and power efficiency of wireless systems. It works on making high-frequency power amplifiers using GaN HEMTs, and the power-transmitting and power-receiving circuits of wireless power transfer, highly efficient through new circuit architectures.
*Illustrative imageHigh-Efficiency Millimeter-Wave Power Amplifiers
The lab researches and develops MMICs of high-performance, high-efficiency power amplifiers using GaN HEMTs, for the W band (75–110 GHz) to be used in future satellite communication networks and for 6G wireless communication using 100–300 GHz. It also plans to advance research on component circuits such as low-noise amplifiers and RF switches, and on applying diamond FETs to microwave and millimeter-wave uses.
*Illustrative imageProposal and Demonstration of the SC-Gate HEMT
The lab has proposed the SC-Gate (Standing-wave Controlled Gate) HEMT, which treats the gate electrode of a transistor (FET) as a distributed-constant line, and has shown that it achieves performance exceeding the conventional theoretical limit.
*Illustrative imageMicrowave and Millimeter-Wave Wireless Power Transfer
The lab researches and develops the power amplifier on the transmitting side and the rectifier on the receiving side, which determine efficiency in wireless power transfer. Because circuit conversion efficiency decreases as frequency rises, it is exploring ways to achieve high efficiency with new circuits and design methods while keeping existing fabrication processes.
MembersFaculty
- Project ProfessorShinji Hara
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “FBH GaN High electron mobility transistor” FBH/P.Immerz / CC BY-SA 4.0 (cropped)
- High-Efficiency Millimeter-Wave Power Amplifiers: “DARPA amplifier on silicon USC” University of Southern California and Columbia University / Public domain (cropped)
- Proposal and Demonstration of the SC-Gate HEMT: “Bruns Monocord-6020 - Power supply unit - transistor KT815A-0121” Raimond Spekking / CC BY-SA 4.0 (cropped)
- Microwave and Millimeter-Wave Wireless Power Transfer: “Wireless power demonstration 1937” 作者不詳 / Public domain (cropped)
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