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Higuchi Lab
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A lab studying nanoionics, which explores the roles of electrons and ions in oxide thin films.
AboutAbout the lab
Nanoionic devices based on the science of electrons and ions
The Higuchi Lab studies the development of new materials using nanostructured oxide films and their application to devices.
Doping an oxide that does not conduct electricity with elements of a different valence gives rise to semiconductor-like electron behavior and ionic conductivity.
In nanoionics, the field that deals with such materials, the lab's research centers on fuel cells, brain-inspired memory devices, all-solid-state lithium-ion batteries, and switching devices.
For graduation research, students make oxide semiconductor thin films and device structures in the lab at the Katsushika Campus, and investigate everything from the basic properties of various conductors to their characteristics as devices.
Key terms
- Nanoionics
- A new field that studies oxides exhibiting both electron and ion conduction by turning them into nanostructures. Both fundamental and applied research are active
- Doping
- Adding elements with a different valence to an oxide that does not conduct electricity. Semiconductor-like electron behavior and ionic conductivity appear
- Schottky barrier
- A barrier that forms at the interface between a metal and a semiconductor. In this lab, it is something to be deliberately controlled
NewsLab news
A feature article on oxide superionic conductors was published in the magazine Clean Energy
Prof. Higuchi was named a Vebleo Fellow by the Vebleo association
Research on oxide superionic conductor thin films by a master's student was selected for JPS Hot Topics by the Physical Society of Japan
A paper on oxide superionic conductor thin films, with a master's student as first author, was published in the Journal of the Physical Society of Japan
ResearchResearch themes
Nanostructuring and multilayering oxide semiconductors can greatly enhance ionic conductivity in addition to electron and hole conduction. The lab works to elucidate this behavior at the level of electronic structure and to deliberately control the Schottky barrier that forms at metal-semiconductor interfaces, leading to device applications.
*Illustrative imageSolid Oxide Fuel Cell Devices
Aiming to realize solid oxide fuel cells that operate in the intermediate-to-high temperature range (300-700°C), the lab investigates the mechanisms of electrode reactions at the interface between the electrolyte and the electrode. By controlling oxygen defects, carriers, and crystal structure, it optimizes the conditions for stable power generation.
*Illustrative imageBrain-Inspired Memory Devices That Mimic the Human Brain
The lab fabricates devices in which a thin film of an oxide ion conductor that conducts both electrons and ions is sandwiched between platinum layers, and inputs signals with varying pulse voltages and time intervals. From the current response, the research aims to reproduce properties of the human brain such as long-term memory, short-term memory, and forgetting.
*Illustrative imageImproving the Performance of All-Solid-State Lithium-Ion Batteries
To improve charge-discharge characteristics, the lab is working to establish methods for quantitatively evaluating solid-solid interfaces. By stacking various lithium-ion conductors, it aims for higher performance.
*Illustrative imageAll-Solid-State Switching Devices
The lab fabricates all-solid-state redox devices and electric double-layer transistors that use oxide ion conductors as the electrolyte film. The research targets applications in resistive switching devices and physical reservoirs.
MembersFaculty
The Higuchi Lab consists of faculty members, research assistants, doctoral and master's students, and undergraduate students doing graduation research.As of 2026
- ProfessorToru Higuchi
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Fish-like blister defect in vanadium oxide 01” AleplaWM / CC BY-SA 4.0 (cropped)
- Solid Oxide Fuel Cell Devices: “Solid oxide electrolyser cell 2x60cell stack” EERE / Public domain (cropped)
- Brain-Inspired Memory Devices That Mimic the Human Brain: “Memristor ( ) (cropped)” U.S. Department of Energy from United States / Public domain (cropped)
- Improving the Performance of All-Solid-State Lithium-Ion Batteries: “Lithium-ion coin cell batteries in laboratory testing fixture” Chingo K / CC BY 4.0 (cropped)
- All-Solid-State Switching Devices: “AE National Semiconductor B9212 GAL16V8QS-25QNC c AST B AD” Epop / CC BY-SA 3.0 (cropped)
- Related lab (伊藤研究室): “BURNED OUT SUPERCONDUCTING MAGNET COIL - NARA - 17450109” Martin Brown / Public domain (cropped)
- Related lab (宮川研究室): “Liquid helium dewar” Alkamid / CC BY-SA 3.0 (cropped)
- Related lab (後藤研究室): “3.5 inch hard disk drive, side view” Gunnar Wolf / CC BY-SA 4.0 (cropped)
- Related lab (遠山研究室): “High-Temperature Superconducting Cables ( )” National Institute of Standards and Technology / Public domain (cropped)
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