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打田研究室
Showing the original Japanese · View translation
質の高い薄膜をつくり、電子の新しい量子相を探る研究室。
AboutAbout the lab
エピタキシー技術から新しい量子相の舞台へ
打田研究室は、
分子線エピタキシーと
つくった
例年、
Key terms
- 分子線エピタキシー
- 真
空中で 原料を 蒸発させて 基板に 吹きつけ、 原子の 層を 積み重ねるように 結晶の 薄膜を つくる 方法 - ホール効果
- 電流を
流した 物質に 磁場を かけると、 電流と 直角の 向きに 電圧が 生じる 現象 - トポロジカル物質
- 電子の
状態が 「トポロジー」と いう 数学の 性質で 特徴づけられ、 特異な 電気の 流れ方を 示す物質
NewsLab news
面内異常ホール効果で
磁場の 三次に 依存する 応答を 明らかに した 論文を 発表 修士課程の
学生が、 「アシンメトリ量子」 領域会議で ポスター賞を 受賞 助教
（当時）が、 理学院若手研 究奨励賞を 受賞 RuO2の
反強磁性秩序の 有無を 明らかに した 論文を 発表 （国際共同研究） 修士課程の
学生が、 物理学コース優秀修士論文賞を 受賞
ResearchResearch themes
分子線エピタキシー技術で、
*Illustrative image面内磁場で起こるホール効果
ホール効果は、
*Illustrative image量子幾何学と磁気輸送
ワイル半金属などの
*Illustrative image薄膜にして現れる超伝導
ふつうは
*Illustrative imageトポロジカル半金属の量子ホール状態
トポロジカル半金属の
MembersFaculty
打田研究室の
- Associate Professor打田 正輝Publications ↗
VoicesStudent voices
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The information on this page is compiled by the LabLog team from the lab's public information and interviews. For corrections or removal requests, please contact LabLog, not the lab.
Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Molecular Beam Epitaxy System” SJMW1987 / CC BY 4.0 (cropped)
- 面内磁場で
起こる ホール効果: “Leybold Hall Effect Apparatus (Silver)” Panoga / CC BY-SA 4.0 (cropped) - 量子幾何学と
磁気輸送: “Tilted dirac cones” QMartist / CC BY-SA 4.0 (cropped) - 薄膜に
して 現れる 超伝導: “Ruthenium(IV)-oxide-unit-cell-3D-vdW” CCoil (talk) / CC BY 3.0 (cropped) - トポロジカル半金属の
量子ホール状態: “Cd3As2 structure” Andif1 / CC BY-SA 4.0 (cropped) - Related lab (村上研究室): “Horseshoe Magnetic Filings (Flipped 180)” Noguarde / CC BY-SA 4.0 (cropped)
- Related lab (藤澤研究室): “Dilution Fridge 008 16K” OJB Quantum / CC BY 4.0 (cropped)
- Related lab (花井研究室): “A starling murmuration - geograph.org.uk - 6389346” Walter Baxter / CC BY-SA 2.0 (cropped)
- Related lab (西田研究室): “Bose-Einstein Condensate ( )” National Institute of Standards and Technology / Public domain (cropped)
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