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Ultra-Wide Bandgap Semiconductor Lab
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A lab that covers everything from crystals to devices for ultra-wide bandgap semiconductors.
AboutAbout the lab
Advanced semiconductor materials and the devices made from them.
The Ultra-Wide Bandgap Semiconductor Lab uses ultra-wide bandgap semiconductors such as GaN, AlN, Ga2O3, and Al2O3 to study devices for optics and electronics.
Its research covers crystal growth, devices for high power and high temperature, pixel detectors for particles, and biomedical devices.
The lab recruits undergraduate students, graduate students, and postdocs from around the world. If you are interested, email the lab to arrange a meeting.
On the lab's website, it is presented under the name "Okumura Group."
Key terms
- Ultra-wide bandgap semiconductor
- A semiconductor with an especially large bandgap, the range of energy within which electrons cannot move freely
- Single crystal
- A solid in which the atoms are aligned throughout as one continuous crystal
- Pixel detector
- A device that detects particles using an array of small detecting elements (pixels)
NewsLab news
Real-time position detection of single events using GaN
Devices using AlN that operate at extreme temperatures
ResearchResearch themes
The lab has studied wide-bandgap semiconductors such as GaN, AlN, Ga2O3, and Al2O3 for optical and electronic applications. Its current interest is advanced electronic devices based on compound semiconductors and nanotechnology, and it works on creating new devices that have not existed before.
*Illustrative imageCrystal growth of gallium oxide and related materials
This research produces single crystals of α-, β-, and κ-type Ga2O3 (gallium oxide) and of Al2O3 (aluminum oxide).
*Illustrative imageDevices for high power and high temperature
The lab studies diodes and transistors made from β-type Ga2O3 and AlN. The targets are devices used at high power or at extreme temperatures.
*Illustrative imageParticle detection devices
The lab studies pixel detectors for particles made from GaN and CIGS.
*Illustrative imageBiomedical devices
As biomedical devices, the lab studies smart contact lenses and sensors that detect lactate.
MembersFaculty
Members of the Ultra-Wide Bandgap Semiconductor Lab consist of faculty, postdoctoral researchers, collaborating researchers, and students.As of 2026
- Associate ProfessorHironori Okumura
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Trilogy WSI Wafer” Richfiles / CC0 (cropped)
- Crystal growth of gallium oxide and related materials: “Dr Thaddeus (Tadj) Asel focuses on the growth of oxide semiconductor materials such as Gallium Oxide to address the need for smaller and higher power electronics (8380304)” U.S. Air Force AFRL by Keith C Lewis / Public domain (cropped)
- Devices for high power and high temperature: “BU608” Mister rf / CC BY-SA 4.0 (cropped)
- Particle detection devices: “Silicon pixel detector-IMG 5766” Rama / CC BY-SA 3.0 fr (cropped)
- Biomedical devices: “Flexible display” U.S. Army RDECOM / CC BY 2.0 (cropped)
- Related lab (パワーエレクトロニクス): “Micro-electric T3000 - board - National Semiconductor LM386N-0694” Raimond Spekking / CC BY-SA 4.0 (cropped)
- Related lab (エネルギー材料・デバイス): “New Thin-Film Solar Cells Compared to Normal Solar Cells (GRC-1966-C-02754)” NASA Glenn Research Center / Public domain (cropped)
- Related lab (半導体量子ナノ構造): “Wafer 20110212” Sangitiana Fararano / CC BY-SA 2.0 (cropped)
- Related lab (超伝導物性工学研究室): “Magnet levitating on top of superconductor cooled by liquid nitrogen” Ainur physicist / CC BY 4.0 (cropped)
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