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前田研究室
Showing the original Japanese · View translation
窒化ガリウムなどのワイドギャップ半導体で電子デバイスを研究する研究室。

AboutAbout the lab
ワイドギャップ半導体の物性を解き明かす。
前田研究室は、
ワイドギャップ半導体は、
研究室では、
素子を
Key terms
- ワイドギャップ半導体
- シリコンより
電子を 動かすのに 大きな エネルギーが 要る 半導体。 高い 電圧や 温度に 強い。 GaNや SiCなど - ショットキー界面
- 金属と
半導体が 接した 境目。 電流を 一方 向に 流しやすい ダイオードに 使われる - 二次元電子ガス
- 2種類の
半導体の 境目に、 薄い層のように 集まった 電子。 速く 動けるので 高周波トランジスタに 使う
NewsLab news
新しい
窒化物半導体NbAlNの 作製に 関する 共著論文が、 Advanced Materialsに 掲載 MBEで
育てたScAlN/GaNヘテロ接合の 二次元電子ガスの 論文が、 Applied Physics Lettersに 掲載 修士課程の
学生が、 ISPSD 2026 Charitat Awardを 受賞 超低損失の
AlN系ショットキーバリアダイオードの 試作に 成功 (プレスリリース) 耐圧kV級の
GaN光伝導型スイッチの 動作実証に 成功 (プレスリリース)
ResearchResearch themes
ワイドギャップ半導体の
*Illustrative image高い電界で起きる現象の解明
シリコンでは
*Illustrative imageショットキー界面の精密評価
窒化アルミニウム
*Illustrative image窒化物ヘテロ接合の二次元電子
分子線エピタキシーで
*Illustrative imageAlN系パワーデバイスの基礎研究
窒化物半導体に
MembersFaculty
前田研究室の
- Lecturer前田 拓也Publications ↗
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Self-etched nitride MOCVD film” Evavilova / CC BY-SA 4.0 (cropped)
- 高い
電界で 起きる 現象の 解明: “ElectricalTree1” Bert Hickman / CC BY 2.5 (cropped) - ショットキー界面の
精密評価: “Schottky Diode Section” Laeman / CC BY 3.0 (cropped) - 窒化物ヘテロ接合の
二次元電子: “Cellular 5G Equipment - Cell Tower Antennas” Tony Webster / CC BY 2.0 (cropped) - AlN系パワーデバイスの
基礎研究: “Aluminium Nitride” en:user:Waprap / Public domain (cropped) - Related lab (田中・
大矢・中根・アイン研究室): “Molecular-beam epitaxy system at LAAS 0514” Guillaume Paumier (user:guillom) / CC BY-SA 3.0 (cropped) - Related lab (トープラサートポン研究室): “Ferroelectric domains at a PZT grain boundary ( )” Oak Ridge National Laboratory / CC BY 2.0 (cropped)
- Related lab (横田研究室): “Strain gauge” Cristian V. / CC BY 4.0 (cropped)
- Related lab (染谷・神保研究室): “Stretchable Electronics” Steve Jurvetson from Menlo Park, USA / CC BY 2.0 (cropped)
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