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Maeda Lab
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The lab researches electronic devices using wide-bandgap semiconductors such as gallium nitride.
AboutAbout the lab
Uncovering the physical properties of wide-bandgap semiconductors
Maeda Lab researches electronic devices made with wide-bandgap semiconductors, typified by GaN (gallium nitride).
Wide-bandgap semiconductors are beginning to be used in power devices that convert electric power and in high-frequency transistors for mobile base stations.
The lab clarifies phenomena that occur at high electric fields and high temperatures unimaginable with conventional silicon, and aims to apply them to improving device performance and realizing new functions.
The lab designs devices, fabricates them itself in the on-campus cleanroom, and carries out measurement and analysis as well.
Key terms
- Wide-bandgap semiconductor
- A semiconductor that requires more energy than silicon to move electrons. It withstands high voltages and temperatures. Examples include GaN and SiC.
- Schottky interface
- The boundary where a metal and a semiconductor are in contact. It is used in diodes, which let current flow easily in only one direction.
- Two-dimensional electron gas
- Electrons that gather in a thin, layer-like region at the boundary between two different semiconductors. They can move fast, so they are used in high-frequency transistors.
NewsLab news
A co-authored paper on the fabrication of NbAlN, a new nitride semiconductor, was published in Advanced Materials
A paper on the two-dimensional electron gas in MBE-grown ScAlN/GaN heterojunctions was published in Applied Physics Letters
A master's student received the ISPSD 2026 Charitat Award
Successful prototyping of an ultra-low-loss AlN-based Schottky barrier diode (press release)
Successful demonstration of a GaN photoconductive switch operating at kV-class breakdown voltage (press release)
ResearchResearch themes
The lab aims to contribute, from an academic standpoint, to elucidating the fundamental physical properties of wide-bandgap semiconductors, to improving device performance, and to the emergence of new functions. It designs devices based on numerical calculations, fabricates them itself, and then measures and analyzes them.
*Illustrative imageUnderstanding phenomena at high electric fields
The lab investigates physical phenomena specific to wide-bandgap semiconductors that occur at high electric fields and extremely high temperatures unimaginable in silicon. Researchers are beginning to find, for example, that the impact ionization coefficients, which determine dielectric breakdown, differ greatly between electrons and holes.
*Illustrative imagePrecise characterization of Schottky interfaces
The lab measured the current–voltage characteristics of aluminum nitride (AlN)-based Schottky barrier diodes in detail and showed that current flows through tunneling transport of thermally excited electrons. This is joint research with NTT Basic Research Laboratories.
*Illustrative imageTwo-dimensional electrons in nitride heterojunctions
Using molecular beam epitaxy, the lab grew high-quality ScAlN/GaN heterojunctions and clarified the scattering mechanisms of the two-dimensional electron gas formed at the interface. This research leads to next-generation high-frequency transistors and is joint research with Sumitomo Electric Industries.
*Illustrative imageFundamental research on AlN-based power devices
Using alloy and heterojunction technologies specific to nitride semiconductors, the lab successfully prototyped a Schottky barrier diode that shows the lowest on-resistance among AlN-based devices. This is joint research with NTT Basic Research Laboratories.
MembersFaculty
The members of Maeda Lab are faculty, a secretary, and students in the doctoral, master's, and undergraduate programs.As of 2026
- LecturerTakuya MaedaPublications ↗
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Self-etched nitride MOCVD film” Evavilova / CC BY-SA 4.0 (cropped)
- Understanding phenomena at high electric fields: “ElectricalTree1” Bert Hickman / CC BY 2.5 (cropped)
- Precise characterization of Schottky interfaces: “Schottky Diode Section” Laeman / CC BY 3.0 (cropped)
- Two-dimensional electrons in nitride heterojunctions: “Cellular 5G Equipment - Cell Tower Antennas” Tony Webster / CC BY 2.0 (cropped)
- Fundamental research on AlN-based power devices: “Aluminium Nitride” en:user:Waprap / Public domain (cropped)
- Related lab (Tanaka-Ohya-Nakane-Le Lab): “Molecular-beam epitaxy system at LAAS 0514” Guillaume Paumier (user:guillom) / CC BY-SA 3.0 (cropped)
- Related lab (Toprasertpong Lab): “Ferroelectric domains at a PZT grain boundary ( )” Oak Ridge National Laboratory / CC BY 2.0 (cropped)
- Related lab (Yokota Lab): “Strain gauge” Cristian V. / CC BY 4.0 (cropped)
- Related lab (Someya-Jimbo Lab): “Stretchable Electronics” Steve Jurvetson from Menlo Park, USA / CC BY 2.0 (cropped)
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