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Atomic Layer Process Science Lab
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A lab that explores reactions and degradation in semiconductors at the atomic-layer level.
AboutAbout the lab
Decoding reactions and degradation at the atomic layer.
The Atomic Layer Process Science Lab studies, in tiny semiconductor transistors, the reactions of thin films and surfaces at the atomic-layer level and the processes by which devices degrade.
Transistors in smartphones are designed at a scale of a few nanometers, which requires technology for stacking metals, oxides, and silicon with atomic-level control.
In quantum devices, it is known that even slight disorder in the crystal lattice becomes a source of noise that disturbs quantum states.
On the lab's website, it is introduced under the name "Kondo Lab."
Key terms
- Transistor
- A semiconductor component that switches or amplifies electrical signals. It is also found inside smartphones.
- Radical
- An atom or molecule in a highly reactive state. It is one of the reactive species generated in plasma.
- Scanning probe microscope
- A microscope that traces the surface of a sample with a fine-tipped probe to examine its shape and properties at the atomic level.
ResearchResearch themes
The lab works on the science of devices and processes needed to realize the advancement of AI and its integration with quantum computing. It studies the science of thin-film and surface reactions at the atomic-layer scale, and the dynamics by which nanodevices degrade.
*Illustrative imageRadical-excited atomic layer processes
Transistors a few nanometers in size require technology for stacking metals, oxides, and silicon with atomic-level control. The lab measures reactive species and surface reactions in real time and analyzes them with informatics methods such as machine learning, aiming to quantitatively decode the complex environment in which these reactions take place.
*Illustrative imageDevice reliability physics
In nanoscale semiconductor devices, high-density currents and electric fields cause degradation at the atomic-layer level, leading to malfunction. The lab observes degradation under plasma exposure and during device operation in real time at the atomic level, using scanning probe microscopy and transmission electron microscopy, and works to clarify the mechanisms.
MembersFaculty
- ProfessorHiroki Kondo
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Filaments inside a plasma tube” Bravemimoza / CC BY 4.0 (cropped)
- Radical-excited atomic layer processes: “Plasma-lamp” Luc Viatour / CC BY-SA 3.0 (cropped)
- Device reliability physics: “Integrated Passive Device solution versus Surface Mount Device (SMD) solution” STMicroelectronics / CC BY-SA 4.0 (cropped)
- Related lab (Plasma Engineering Lab): “FreshFrozenPlasma” DiverDave / CC BY-SA 3.0 (cropped)
- Related lab (Electron Spin Physics and Engineering Lab): “Magnetic Semiconductor ( )” National Institute of Standards and Technology / Public domain (cropped)
- Related lab (Quantum Device Engineering Lab): “DoubleQuantumDot” Vitaly Golovach / Public domain (cropped)
- Related lab (Constructive Electronics Lab): “Neuromorphic Nanowire Network” DrHughManning / CC BY-SA 4.0 (cropped)
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