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Nano Physical Properties and Devices Lab
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A lab that aims to create next-generation low-power devices through semiconductor spintronics and related fields.
AboutAbout the lab
Aiming for low-power devices through high-quality heterojunctions.
The Hamaya Lab aims to develop next-generation low-power electronics using semiconductor spintronics, multiferroic, and superconducting devices.
Behind this is the projection that the power consumption of large-scale data centers will grow to about 2,500 times the current level by 2050.
The lab aims to pioneer on-chip integrated semiconductor technology that places a low-power logic unit and non-volatile memory on a silicon substrate.
The lab website introduces the lab under the name "Hamaya Lab."
Key terms
- Spin MOSFET
- A device that, in addition to the computing function of a transistor, also works as non-volatile memory by using magnets (ferromagnets) for its electrodes
- Interfacial multiferroic materials
- Materials made of a high-performance spintronic material and a ferroelectric. The lab is developing them for voltage control of magnetization
- Single flux quantum (SFQ) circuit
- A circuit that computes by mapping the presence or absence of a flux quantum in a superconducting loop to "1" and "0"
NewsLab news
A collaborative study on magnetic anisotropy control published in Journal of Applied Physics
A paper on magnon-phonon coupling in Heusler alloys published as a Letter in Physical Review Applied
A collaborative study on sputter epitaxy of ZnO thin films published in ACS Omega
A review paper on vertical spintronic devices, co-written with NIMS, published in Journal of Physics D: Applied Physics
A collaborative study with the University of York (UK) published in Applied Surface Science
ResearchResearch themes
Because the growing power consumption of data centers has become a social issue, the lab considers it important to develop technologies that reduce the power consumption of semiconductor systems. The lab aims to pioneer innovative on-chip integrated semiconductor technology that combines a logic unit and non-volatile memory operating on a silicon substrate.
*Illustrative imageSilicon-germanium spin MOSFETs
The lab aims to demonstrate spin MOSFETs that use germanium or silicon-germanium as the semiconductor channel. It is working to raise the magnetoresistance ratio, a key performance indicator, to a level that can be read out in a circuit.
*Illustrative imageHighly integrated vertical spin devices
Because improving lateral structures alone is making further performance gains difficult, the lab conducts original research on vertical device structures. Using molecular beam epitaxy, it has demonstrated a fully single-crystal vertical structure on a Si substrate.
*Illustrative imageVoltage-controlled spin devices
When magnetization is controlled by current, the power needed for writing increases as devices become smaller and faster. To control magnetization by voltage instead, the lab is developing interfacial multiferroic materials and devices that use them.
*Illustrative imageLow-power memory for superconducting circuits
The writing method of memory for single flux quantum (SFQ) circuits has issues in terms of integration and power saving. The lab is therefore exploring the application of magnetism control technology based on interfacial multiferroic structures, and has succeeded in fabricating superconducting thin films on a piezoelectric material.
MembersFaculty
Members of the Hamaya Lab consist of faculty, affiliated faculty and staff, secretaries, and doctoral, master's, and undergraduate students.As of 2026
- ProfessorKohei Hamaya
- Associate ProfessorShinya Yamada
- Assistant ProfessorSora Obinata
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Micro-chips wafer (83846)” Syced / CC0 (cropped)
- Silicon-germanium spin MOSFETs: “Polycrystalline-germanium” Jurii / CC BY 3.0 (cropped)
- Highly integrated vertical spin devices: “MTJ with Transparent Background” OJB Quantum / CC BY 4.0 (cropped)
- Voltage-controlled spin devices: “MRAM Cell 3D Model” OJB Quantum / CC BY 4.0 (cropped)
- Low-power memory for superconducting circuits: “Superconducting Quantum Chip with Dispersive Background 2” OJB Quantum / CC BY 4.0 (cropped)
- Related lab (Strongly Correlated Systems Theory Lab): “Levitation meissner” Julien Bobroff (user:Jubobroff), Frederic Bouquet (user:Fbouquet), LPS, Orsay, France / CC BY-SA 3.0 (cropped)
- Related lab (Strongly Correlated Systems Spectroscopy Lab): “Aust.-Synchrotron,-Storage-Ring-Magnets” jjron / CC BY-SA 3.0 (cropped)
- Related lab (Strongly Correlated Quantum Physics Lab): “Dilution Fridge in 16K Resolution 002” OJB Quantum / CC BY 4.0 (cropped)
- Related lab (Functional Characterization of Strongly Correlated Materials Lab): “Superconducting magnet cutaway” Hzofia74 / CC BY 4.0 (cropped)
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