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Computational Quantum Information Electronics Lab
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The lab uses computation to explore everything from atomic-scale quantum transport to integrated systems.
AboutAbout the lab
From atomic-scale physics to integrated systems
The Computational Quantum Information Electronics Lab (Mori Lab) conducts theoretical research based on computational physics, aiming to realize devices and integrated systems that use new materials, new structures, and new principles.
Its research spans a wide range of levels, from elucidating the physical phenomena that appear at the atomic level in quantum devices to improving the performance of integrated systems.
In addition to modeling and simulation of atomic-layer materials and power devices, the lab works on heat control and on integrated circuit technology that operates at low voltage.
Key terms
- Quantum transport
- An approach that treats electrons as particles moving according to quantum mechanics in order to study the flow of electricity inside a device
- Two-dimensional (2D) materials
- Extremely thin materials only about one atomic layer thick, such as graphene and molybdenum disulfide
- Wide-bandgap semiconductors
- Semiconductors such as silicon carbide, gallium nitride, and diamond, which are used in power control devices
- First-principles calculation
- A method of calculating electronic states based on quantum theory
NewsLab news
Paper on the electronic state analysis of ZnSe/ZnS core-shell quantum dots published in Journal of Applied Physics
Paper on the short-channel suppression effect in p-GaN gate GaN HEMTs published in IEEE Transactions on Electron Devices
Paper on the effect of substrate impurities on the density of states of MOS structures published in Japanese Journal of Applied Physics
Paper on edge scattering in turbostratic graphene published in Japanese Journal of Applied Physics
Paper on TCAD simulation of GaN/AlGaN HEMTs published in Japanese Journal of Applied Physics
ResearchResearch themes
In extremely small devices, the quantum nature of electrons and the fact that devices are made of atoms can no longer be ignored. Based on computational physics, the lab develops simulators that investigate the electrical and thermal behavior of new materials and devices.
*Illustrative imageQuantum transport simulation of ultra-miniaturized devices
The lab develops simulators for quantum transport calculations that take into account the quantum nature of electrons and the fact that devices are made of atoms. The goal is to run them on large-scale computers such as the supercomputer Fugaku.
*Illustrative imageSimulation of atomic-layer semiconductor devices
The targets are two-dimensional materials that are only about one atomic layer thick, such as graphene and molybdenum disulfide. The lab models and simulates devices such as heterostructure devices that combine different atomic layers.
*Illustrative imageSimulation of power devices
The lab develops simulators that predict the still poorly understood electrical conduction properties of wide-bandgap semiconductors such as silicon carbide, gallium nitride, and diamond. The simulators are based on first-principles calculations grounded in quantum theory.
*Illustrative imagePhonon transport and thermoelectric conversion devices
To control the heat generated in integrated circuits, the lab develops a new device simulator that solves the transport equations for electrons and phonons simultaneously. It also works on improving the efficiency of thermoelectric conversion devices.
MembersFaculty
The members of the Mori Lab consist of faculty, administrative assistants, Project Researchers, Visiting Professors, visiting faculty, and visiting researchers, students in the doctoral, master's, and undergraduate programs, and auditing students.As of 2026
- ProfessorNobuya Mori
- Associate ProfessorToshimasa Matsuoka
- Assistant ProfessorSachika Nagamizo
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “ICM7107x” Mister rf / CC BY-SA 4.0 (cropped)
- Quantum transport simulation of ultra-miniaturized devices: “AE National Semiconductor B9212 GAL16V8QS-25QNC c AST B AD” Epop / CC BY-SA 3.0 (cropped)
- Simulation of atomic-layer semiconductor devices: “Graphen” AlexanderAlUS / CC BY-SA 3.0 (cropped)
- Simulation of power devices: “Rounded Silicon Carbide Ingot” LaMèreVeille / CC BY-SA 4.0 (cropped)
- Phonon transport and thermoelectric conversion devices: “Т-200, Т-201 термоэлектрические преобразователи, Микропровод Кишинёв 1979 (02)” 155LA3 / CC BY 4.0 (cropped)
- Related lab (Nanomaterial Electronics Lab): “Microchip for Carbon Nanotube Field Effect Transistors fabrication” Aidar Kemelbay / CC BY-SA 4.0 (cropped)
- Related lab (Quantum Photonics Lab): “Scientist measures the optical limiting performance of a nonlinear material - ALC” Adelphi Lab Center Douglas G. LaFon / CC BY 2.0 (cropped)
- Related lab (Integrated Information Design Lab): “CW-01 National Semiconductor Scientific Calculator Watch CMOS-LSI circuit dies” Mister rf / CC BY-SA 4.0 (cropped)
- Related lab (Power Systems Lab): “DSC04737 APG Leoben Substation, Leoben-Donawitz, 2026-04” Aciarium / CC BY-SA 4.0 (cropped)
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