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Nanoelectronic Device Engineering Lab
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A lab working toward fast, low-power devices using semiconductors from the same group as silicon.
AboutAbout the lab
New semiconductor materials to make the world more convenient
The Nakatsuka Lab studies new semiconductor materials and devices based on group IV semiconductors, typified by silicon.
It aims to improve the performance of extremely small, nanometer-scale transistors and to realize devices that combine light and electricity.
The lab works on exploring new materials, designing device structures, and researching LSI manufacturing processes.
It focuses on techniques for growing thin films such as GeSn, germanium with added tin, with their atomic arrangement aligned.
Key terms
- LSI
- An integrated circuit that packs many transistors onto a single chip. It serves as the brain of smartphones and computers.
- Mixed crystal
- A crystal made by mixing multiple elements. Its properties can be tuned by changing the mixing ratio.
- Epitaxial growth
- A method of growing a thin crystal film on a base crystal so that it follows the atomic arrangement of the base crystal.
- Energy harvesting
- A technology that collects small amounts of energy in our surroundings, such as heat and light, and converts it into electricity.
NewsLab news
Joint research with NEC and AIST yields an infrared light sensor that can detect light up to the 3 μm band at room temperature
A master's student received the Young Researcher Encouragement Award (Yukio Yasuda Award) at the Workshop on Electron Device Interface Technology
A master's student received the Young Researcher Award at IWDTF
A master's student received the Outstanding Presentation Encouragement Award at the 38th Fall Symposium of the Ceramic Society of Japan
A master's student received a Presentation Encouragement Award at the 58th (Spring 2025) Japan Society of Applied Physics Meeting
ResearchResearch themes
Based on group IV semiconductor materials typified by silicon, the lab researches higher performance for extremely small transistors and the realization of photonic-electronic convergence devices. It works on exploring new materials, designing device structures, and researching and developing LSI manufacturing processes.
*Illustrative imageCrystal Growth of Group IV Mixed-Crystal Semiconductors
GeSn, made by adding tin (Sn) to germanium (Ge), and SiGeSn, which also adds silicon (Si), are mixed crystals whose properties can be tuned by changing their composition. The lab develops techniques for growing these materials epitaxially with high quality by molecular beam epitaxy and chemical vapor deposition.
*Illustrative imageGate Insulators and Interfaces of Transistors
When an oxide film is formed on a mixed crystal such as GeSn at a high temperature, the tin precipitates. The lab aims to establish a technique that uses atomic layer deposition (ALD) to form an extremely thin, high-quality layer between the gate insulator and the semiconductor at a low temperature.
*Illustrative imageLow-Resistance Metal–Semiconductor Junctions
Reducing the power consumption of transistors requires lowering the resistance of the contacts, where metal meets semiconductor. Using interface layers of GeSn or SiGeSn and metal electrodes with an aligned atomic arrangement, the lab aims to elucidate how current flows and to form low-resistance contacts.
*Illustrative imageMaterials That Convert Heat into Electricity
For battery-free IoT devices, the lab develops energy harvesting materials that convert small amounts of heat in our surroundings into electricity. Using silicon, germanium, and tin, which could become the main elements of future LSI, it takes on the challenge of greatly improving the performance of converting heat into electricity.
MembersFaculty
The Nakatsuka Lab consists of faculty members, secretarial staff, and doctoral, master's, and undergraduate students.As of 2026
- ProfessorOsamu Nakatsuka
- Associate ProfessorMasashi Kurosawa
- Assistant ProfessorMitsuo Sakashita
- Assistant ProfessorShigehisa Shibayama
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Silicon wafer with mirror finish” NASA Glenn Research Center / Public domain (cropped)
- Crystal Growth of Group IV Mixed-Crystal Semiconductors: “Molecular-beam epitaxy 412 RIBER system at LAAS-CNRS” QGravelier / CC BY-SA 4.0 (cropped)
- Gate Insulators and Interfaces of Transistors: “Filling with hazardous reagents for the atomic layer growth process” R Ashurov / CC BY 4.0 (cropped)
- Low-Resistance Metal–Semiconductor Junctions: “ΜA791KC die” Mister rf / CC BY-SA 4.0 (cropped)
- Materials That Convert Heat into Electricity: “Voyager Program - RTG upclose” NASA/JPL / Public domain (cropped)
- Related lab (Electron Beam Nanophysics and Engineering Lab): “Transmission Electron Microscope Kemira” kallerna / Public domain (cropped)
- Related lab (Magnetic Materials Engineering Lab): “Magnetite crystal structure (Fleet 1986, 633D) polyhedra model crystallographic standard alignmend” Ra'ike (Wikipedia) / CC0 (cropped)
- Related lab (Strongly Correlated Materials Engineering Lab): “Vapor Crystal Growth System Furnace” NASA / Public domain (cropped)
- Related lab (Optical Physics and Engineering Lab): “Optoelectronics experiment” Adelphi Lab Center / CC BY 2.0 (cropped)
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