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Shimura Lab
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The lab improves device performance by carefully assessing semiconductor materials and their crystals.
AboutAbout the lab
Assessing and creating semiconductor materials
The Shimura Lab studies materials and processes for semiconductor devices.
Aiming at low-power devices that combine electronics and photonics, the lab works with Ge and GeSn, group IV semiconductors that are compatible with silicon.
For power devices that handle large amounts of electric power, the lab also develops evaluation techniques that use X-ray topography to examine crystal defects.
Through the development of semiconductor devices, the lab aims to contribute to better lives for everyone.
Key terms
- Group IV semiconductor
- A semiconductor made of elements in group 14 of the periodic table, such as silicon and germanium
- X-ray topography
- A method that shines X-rays on a crystal to image the defects and strain inside it
- Seebeck effect
- A phenomenon in which a voltage is generated when there is a temperature difference between the two ends of a material. It is used to convert heat into electricity
NewsLab news
Paper published in Materials Science in Semiconductor Processing
Paper accepted by Japanese Journal of Applied Physics
Master's student received the Session Best Presentation Award at ISIPS 2025
Paper accepted by Japanese Journal of Applied Physics
ResearchResearch themes
As digitalization and IoT spread, information and communication systems are required to deliver unprecedented performance. Built on two pillars, group IV semiconductor materials such as Ge and GeSn, and crystal evaluation by X-ray topography, the Shimura Lab aims to contribute to better lives through the development of semiconductor devices.
*Illustrative imageIntegrated Photonic-Electronic Devices
Combining electronic circuits with optical devices makes it possible to exchange data faster and with less power. Using Ge and GeSn, group IV semiconductors that are compatible with silicon technology, the lab aims to realize devices that integrate light and electronics.
*Illustrative imageX-ray Topography
Substrates of wide-bandgap semiconductors such as SiC, used in power devices, suffer from a high density of crystal defects. By evaluating crystals and their defects with X-ray topography, the lab aims to improve the reliability and productivity of next-generation power devices.
*Illustrative imageThermoelectric Devices from Ge-Based Materials
A thermoelectric device converts heat directly into electricity using the Seebeck effect, in which a temperature difference generates a voltage. The lab is working on thermoelectric devices that perform well even at room temperature, using GeSn materials made by laser-induced liquid-phase crystallization.
MembersFaculty
The Shimura Lab consists of faculty members and master's students.As of 2026
- ProfessorTakayoshi Shimura
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Semiconductor Wafer of Microelectronics” DrHughManning / CC BY-SA 4.0 (cropped)
- Integrated Photonic-Electronic Devices: “Propagation of light through the core of an optical fiber. Macro visualization.” AZToshkov / CC BY-SA 3.0 (cropped)
- X-ray Topography: “Aust.-Synchrotron-Soft-X-ray-Beamline-Experimental-Station” jjron / CC BY-SA 3.0 (cropped)
- Thermoelectric Devices from Ge-Based Materials: “Peltierelement 16x16” Bye / Public domain (cropped)
- Related lab (Tateno Lab): “CSIRO ScienceImage 3719 CSIROs Fleck wireless sensor network technology” Stephan Brosnan, CSIRO / CC BY 3.0 (cropped)
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- Related lab (Mawatari Lab): “Lab on a Chip ( )” National Institute of Standards and Technology / Public domain (cropped)
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