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Tsukamoto Lab
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A lab that works broadly from electronic materials to electronic device development.
AboutAbout the lab
From electronic materials to device development
The Tsukamoto Lab works broadly from electronic materials to the development of electronic devices.
The lab covers everything from crystal growth of Group IV semiconductors to device prototyping, and also develops elemental technologies for diamond-based devices.
Its themes include devices that operate at high frequencies such as millimeter waves, light-emitting semiconductor materials, and diamond power devices.
The research is motivated by the goals of building an energy-saving society and opening up frequency resources in high frequency bands.
Key terms
- Millimeter waves
- Radio waves with frequencies of 30 to 300 GHz. Waves at even higher frequencies, from 300 GHz to 10 THz, are called terahertz waves.
- Resonant tunneling diode
- A semiconductor device expected to oscillate at high frequencies. Abbreviated as RTD.
- GeSn
- A Group IV semiconductor made of germanium and tin. It is attracting attention as a direct-bandgap material.
- Power device
- A device that controls the power supply in highly efficient power-use systems.
NewsLab news
An undergraduate student won an Excellent Presentation Award at the Electronic Engineering Program presentation
A doctoral student received the FY2025 (Reiwa 7) Student Award
An undergraduate student won an Excellent Presentation Award at the FY2025 (Reiwa 7) graduation thesis presentation
A doctoral student's paper was accepted by an academic journal
An undergraduate student won an Excellent Presentation Award at the Electronic Engineering Program presentation
ResearchResearch themes
The Tsukamoto Lab works broadly from electronic materials to the development of electronic devices. Aiming at energy saving and the use of high frequency bands, it develops devices based on Group IV semiconductors and diamond.
*Illustrative imageDevelopment of High-Frequency Devices
The lab develops high-frequency devices aimed at opening up high frequency bands such as millimeter waves and terahertz waves. It prototypes low-noise HEMTs and resonant tunneling diodes, starting from crystal growth of Group IV semiconductors.
*Illustrative imageDevelopment of Group IV Light-Emitting Devices
Introducing optical circuits and replacing electrical wiring with optical interconnects can reduce energy consumption. Focusing on direct-bandgap GeSn and GeSiSn, the lab develops Group IV light-emitting materials.
*Illustrative imageNext-Generation Diamond Devices
As a next-generation technology to the currently dominant Si power devices, the lab develops elemental technologies toward the real-world deployment of diamond power devices. It also works on diamond quantum photonic devices for quantum light source and quantum memory applications.
MembersFaculty
The Tsukamoto Lab consists of faculty members and doctoral, master's, and undergraduate students.As of 2026
- Associate ProfessorTakahiro Tsukamoto
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “2N140 PNP Germanium Alloy Junction Transistor closeup” John Maushammer / CC BY 4.0 (cropped)
- Development of High-Frequency Devices: “MM8009” Mister rf / CC BY-SA 4.0 (cropped)
- Development of Group IV Light-Emitting Devices: “Silicon Photonics 300mm wafer” Ehsanshahoseini / CC BY-SA 4.0 (cropped)
- Next-Generation Diamond Devices: “Boron-doped diamond (BDD) electrodes” Johannes Schneider / CC BY 4.0 (cropped)
- Related lab (中村 淳・新𠮷 直樹 研究室): “DV74HC4051 CMOS 1996 (01)” Retired electrician / CC0 (cropped)
- Related lab (沈
青 研究室): “Sargent Group quantum dot solar cell” Lukasz Brzozowski / CC BY-SA 3.0 (cropped) - Related lab (山口 浩一
研究室): “U.S. Department of Energy - Science - )” U.S. Department of Energy from United States / Public domain (cropped)
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