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Tajiri Lab
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A lab that handles everything from crystal growth to device prototyping for nitride semiconductors.

AboutAbout the lab
Building electronic and optical devices from nitride semiconductors
The Tajiri Lab conducts experimental research aimed at applying materials centered on nitride semiconductors to electronic and optical devices.
Covering everything from growing crystals to semiconductor processing and the evaluation of electrical and optical properties, the lab develops new nanoscale fabrication and measurement techniques as well as new devices.
Undergraduate thesis students are taught experimental methods from scratch, so no prior knowledge of semiconductors is needed.
However, a prior interview is required to be assigned to the lab for graduation research, and students are advised to first email a faculty member to make an appointment.
Key terms
- Nitride semiconductors
- Semiconductor materials containing nitrogen, such as GaN, AlGaN, and InGaN.
- Metalorganic vapor phase epitaxy (MOVPE)
- A method of growing crystals by depositing thermally decomposed source atoms onto a heated substrate placed in a source gas.
- Epitaxial growth
- Crystal growth in which atoms line up while keeping a fixed relationship with the orientation of the crystal plane and the lattice constant of the substrate.
ResearchResearch themes
This is an experimental lab aiming to apply materials centered on nitride semiconductors to electronic and optical devices. Through crystal growth, semiconductor processing, and the evaluation of electrical and optical properties, the lab develops new nanoscale fabrication and measurement techniques and new devices.
*Illustrative imageCrystal growth of nitride semiconductors
The lab uses metalorganic vapor phase epitaxy (MOVPE) to grow III-V semiconductor crystals epitaxially. It can also form heterojunctions, which join materials with different properties, and studies crystal growth techniques for device applications of nitride semiconductors.
*Illustrative imagePrototyping and evaluation of semiconductor devices
The lab fabricates prototype devices with semiconductor processing equipment and evaluates them optically and electrically. Recently, its main subjects have been tunnel junction diodes made of ZnO thin films and deep ultraviolet light-emitting diodes (LEDs), and it also works on new optical devices that use fine structures on the order of the wavelength of light.
MembersFaculty
The members of the Tajiri Lab consist of faculty, administrative staff, emeritus professors, and master's and undergraduate students.As of 2026
- Associate ProfessorTakeyoshi Tajiri
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Schematic of crystal growth of simple cubic lattice, showing additional molecule adding in corner” Richard Sear / CC BY-SA 4.0 (cropped)
- Crystal growth of nitride semiconductors: “Silver surface crystal growth SEM” Fernando Estel / CC BY-SA 3.0 (cropped)
- Prototyping and evaluation of semiconductor devices: “AE National Semiconductor B9212 GAL16V8QS-25QNC c AST B AD” Epop / CC BY-SA 3.0 (cropped)
- Related lab (Fan Lab): “BIOS chip MXIC 25L6406E on a ThinkPad X220 motherboard (FRU 04W3286)” Siarhei Besarab / CC BY-SA 4.0 (cropped)
- Related lab (Ishikawa Lab): “Monolithic microwave integrated circuit MSA0686 fixed” Appaloosa / CC BY-SA 3.0 (cropped)
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- Related lab (Kayano Lab): “Circuit board after manual etching” Tinux / CC0 (cropped)
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