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Kobayashi Lab
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The lab makes nitride thin films to combine the functions of superconductors and semiconductors.
AboutAbout the lab
Combining materials with different functions through crystal growth
The Kobayashi Lab studies the functional integration of thin-film materials through material design by crystal growth.
The lab aims to create next-generation device materials by thinning materials with different functions, such as semiconductors, superconductors, and ferroelectrics, down to the nanoscale and joining them to one another.
The lab works to improve the quality and functionality of thin-film materials that lead to the development of quantum computers, quantum information and communication, power electronics, and new types of semiconductors for AI computation.
Thin films are made by sputtering.
Key terms
- Sputtering
- One method of making thin films. It can form high-quality epitaxial thin films at relatively low temperatures.
- Josephson junction
- A junction made by sandwiching a thin semiconductor layer between superconductors.
- Two-dimensional electron gas
- Electrons that accumulate at high density at the interface when a polar nitride is stacked on GaN.
ResearchResearch themes
The lab controls the crystal phase, polarity, local structure, and heterointerfaces of nitride materials to study new materials and electronic devices that combine the functions of semiconductors, ferroelectrics, and superconductors. The research is divided into three areas: combining superconductors with semiconductors, developing new polar and ferroelectric nitrides, and polarization-controlled nitride heterostructures and electronic devices.
*Illustrative imageCombining Superconductors and Semiconductors
The lab develops techniques to control the crystal phase of nitride superconductors such as NbN and to form high-quality epitaxial interfaces with nitride semiconductors such as AlN and GaN. Using Josephson junctions in which a semiconductor layer is sandwiched between superconductors, it aims to create devices that have the functions of both.
*Illustrative imageNew Polar and Ferroelectric Nitrides
In AlN-based nitrides, polarization, piezoelectricity, and ferroelectricity change greatly depending on the added element and the atomic arrangement. The lab makes thin films of ScAlN, NbAlN, BAlN, and others, and investigates the relationships among crystal structure, atomic arrangement, polarity, and physical properties.
*Illustrative imageNitride Heterostructures and Electronic Devices
When a polar nitride is stacked on GaN, a high density of electrons accumulates at the interface. Using ScAlN or NbAlN as the barrier layer, the lab controls lattice matching, interface structure, and the two-dimensional electron gas, aiming for high-power, high-frequency transistors and devices with memory functions.
MembersFaculty
The Kobayashi Lab consists of faculty members, visiting faculty members, and master's and undergraduate students.As of 2026
- Associate ProfessorAtsushi Kobayashi
- Assistant ProfessorKazuhisa Ikeda
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Surface MOCVD films defects” Evavilova / CC BY-SA 4.0 (cropped)
- Combining Superconductors and Semiconductors: “Molecular-beam epitaxy 412 RIBER system at LAAS-CNRS” QGravelier / CC BY-SA 4.0 (cropped)
- New Polar and Ferroelectric Nitrides: “Titanium nitride TiN” Sa123 / CC0 (cropped)
- Nitride Heterostructures and Electronic Devices: “Nedap ESD1 - power supply board 1 - ON Semiconductor U” Raimond Spekking / CC BY-SA 4.0 (cropped)
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