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Kakushima Lab
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A lab that creates next-generation electronic devices by controlling the boundaries between different materials.
AboutAbout the lab
Next-generation electronic devices through control of functional interfaces.
The Kakushima Lab researches the fabrication of semiconductor devices with high performance and low power consumption.
Semiconductor devices have operated by exploiting the properties of interfaces where different kinds of materials meet.
The lab devises processes that bring out the full inherent function of those interfaces, and builds prototype devices to verify them.
The devices it handles are power devices, which convert electric power efficiently, and solar cells with higher conversion efficiency.
Key terms
- Semiconductor device
- An element made of semiconductor, such as a transistor, that can control the flow of electricity.
- Power device
- A semiconductor device for switching large amounts of electric power or converting it into another form for delivery.
- Interface
- The boundary region where different kinds of materials are in contact.
NewsLab news
View More ↗ResearchResearch themes
Building an energy-saving society requires highly efficient energy control with large-scale integrated circuits, and the semiconductor devices for it must offer both high performance and low power consumption. The lab devises processes that realize ideal interfaces between dissimilar materials and verifies them by building prototype devices.
*Illustrative imageGaN power devices
AlGaN/GaN HEMTs are devices expected to convert electric power efficiently. Using interface control techniques, the lab investigates gate insulator materials that allow the threshold to be tuned, and electrode materials with high reliability.
SiC power devices
Silicon carbide (SiC) is a material that can convert power efficiently in the high-voltage range used in social infrastructure. To further improve efficiency and stability, the lab investigates gate insulator and Schottky electrode materials from the standpoint of interface control.
*Illustrative imageNanowire solar cells
When silicon is thinned to 10 nanometers or less, the band gap widens due to quantum effects. The lab uses this to raise the open-circuit voltage of solar cells, and is identifying the issues that must be solved to improve conversion efficiency.
MembersFaculty
- Associate ProfessorKuniyuki KakushimaPublications ↗
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “SiC wafers 6inch” FDominec / CC BY-SA 4.0 (cropped)
- GaN power devices: “FBH GaN High electron mobility transistor” FBH/P.Immerz / CC BY-SA 4.0 (cropped)
- Nanowire solar cells: “Nanowire ( )” Oak Ridge National Laboratory / CC BY 2.0 (cropped)
- Related lab (Miyajima Lab): “Perovskite solar cell” Dennis Schroeder / National Renewable Energy Laboratory / Public domain (cropped)
- Related lab (Takemoto-Kiyota Lab): “Stator Winding of a BLDC Motor” Medvedev / CC BY-SA 3.0 (cropped)
- Related lab (Urakabe-Harada Lab): “IGBT 2441” Daniel*D / CC BY-SA 3.0 (cropped)
- Related lab (Fujita-Sano Lab): “J-POWER SAKUMA frequency converter station” Jihara19 / CC BY-SA 4.0 (cropped)
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