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Ohmi Lab
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A lab that creates transistors and memory with new structures using high-k and ferroelectric materials.

AboutAbout the lab
Creating transistors with new structures.
The Ohmi Lab studies transistors with new structures.
The electronic devices around us are built by integrating a very large number of transistors made of silicon.
Using thin films of high-k and ferroelectric materials, the lab creates extremely small silicon devices, flexible organic semiconductor devices, and memory that retains data even when the power is turned off.
Key terms
- Ferroelectric material
- A material in which the orientation of electrical polarization, aligned by applying a voltage, remains after the voltage is removed. It can be used for memory.
- Nonvolatile memory
- Memory that retains stored data even when the power is turned off.
- Organic semiconductor
- A semiconductor made of organic compounds built on a carbon backbone. It enables thin, flexible devices.
NewsLab news
View More ↗ResearchResearch themes
The lab researches the fabrication of devices with new structures using high-k and ferroelectric materials. It works on extremely small silicon devices, flexible organic semiconductor devices, and nonvolatile memory built from a single transistor.
*Illustrative imageExtremely small silicon devices
The lab studies techniques for forming hafnium-based high-k thin films on three-dimensional structures, methods for flattening silicon substrate surfaces at the atomic level, and the formation of silicide thin films with low contact resistance.
*Illustrative imageFlexible organic semiconductor devices
The lab studies n-type organic transistors that operate even in air by using an electron injection layer. It also works on top-gate CMOS circuits made from a single organic semiconductor.
*Illustrative imageOne-transistor nonvolatile memory
This research concerns memory that can store data with a single transistor and retains it when the power is turned off. The lab works on hafnium-based MONOS transistors and transistors that use a ferroelectric as the gate.
MembersFaculty
The members of the Ohmi Lab consist of faculty, doctoral and master's students, support staff, and secretaries.As of 2026
- Associate ProfessorShun'Ichiro OhmiPublications ↗
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Ehysteresis” Ndthe / CC BY 3.0 (cropped)
- Extremely small silicon devices: “Clean room” NASA / Public domain (cropped)
- Flexible organic semiconductor devices: “C60-fullerene anion crystals deposited over a platinum wire” Adrian Villalta / CC BY-SA 2.0 (cropped)
- One-transistor nonvolatile memory: “MX25U4035Z-HD” ZeptoBars / CC BY 3.0 (cropped)
- Related lab (飯野研究室): “Nematic liquid crystal” Ingo Dierking / CC BY-SA 4.0 (cropped)
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- Related lab (鈴木研究室): “Terahertz freq. metamaterial modulator” Hou-Tong Chen (Los Alamos National Laboratory) / Public domain (cropped)
- Related lab (浦壁・原田研究室): “IGBT 2441” Daniel*D / CC BY-SA 3.0 (cropped)
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