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Functional Communication and Sensing Lab
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The lab builds communication and sensing circuits and semiconductor devices for the IoT society.

AboutAbout the lab
Building the IoT society from circuits and devices.
The Functional Communication and Sensing Lab studies systems, circuits, and devices for information communication and sensing, aiming to realize an IoT society.
It works on devices that handle terahertz waves using low-cost CMOS technology, circuits that run on very little power, and intelligent sensing technology that also relates to human sensibility.
In the device group, for power devices that must be highly efficient to save energy, the lab fabricates and evaluates the interface between gallium nitride (GaN) and insulating films (the MOS interface), and studies how to establish methods to control it.
Key terms
- CMOS
- A basic way of building circuits, widely used in the semiconductor chips of smartphones and computers
- Terahertz waves
- Electromagnetic waves with frequencies between radio waves and light. Possible uses include seeing through things that are invisible to the eye
- MOS structure
- A structure made by stacking metal, an oxide film (insulating film), and a semiconductor. It is the heart of a transistor
ResearchResearch themes
The lab studies systems, circuits, and devices for information communication and sensing toward realizing an IoT society. Its scope is broad, from circuits that operate with terahertz waves or at ultra-low power to fabrication processes for nitride semiconductor power devices.
*Illustrative imageTerahertz and ultra-low-power circuits and sensing
The lab studies devices that operate in the terahertz electromagnetic wave band using low-cost CMOS technology. Alongside exploring fabrication processes for nitride semiconductors, it works on ultra-low-power CMOS circuits that run at very low voltages, and on intelligent sensing technology that is far faster than before and also handles human sensibility.
*Illustrative imageMOS structures and transistors on p-type GaN
It is known that many defect-related levels form at the MOS interface with p-type gallium nitride (GaN). By optimizing the process, combining a low-damage surface etching method with heat treatment, the lab found a clue to reducing defects. It is advancing research to apply this to the fabrication of MOSFETs.
*Illustrative imageSuppressing defects in ion-implanted GaN
In ion implantation, which is essential for making power devices, defects remaining in GaN are a challenge. The lab examines the behavior of defects in Mg-implanted GaN annealed at 500°C to 1300°C using MOS structures, and is working on whether preheating can shorten the time of the high-temperature treatment.
*Illustrative imageProbing the MOS interface with light
At the MOS interface of wide-bandgap semiconductors, the range that can be evaluated with the ordinary capacitance-voltage method is limited. By combining it with a method that shines monochromatic light of small energy, the lab aims to establish a method to evaluate interface defects located deep in the band gap.
MembersFaculty
The members of the Functional Communication and Sensing Lab consist of faculty, postdoctoral researchers, and doctoral, master's, and undergraduate students.As of 2025
- ProfessorMasayuki Ikebe
- Associate ProfessorMasamichi Akazawa
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Pier2.3 OV7120 CMOS image sensor closeup” Phiarc / CC BY-SA 4.0 (cropped)
- Terahertz and ultra-low-power circuits and sensing: “1645RT2U-Si-HD” ZeptoBars / CC BY 3.0 (cropped)
- MOS structures and transistors on p-type GaN: “GaNcrystal” Materialscientist (talk) / CC BY-SA 3.0 (cropped)
- Suppressing defects in ion-implanted GaN: “Ion implantation machine at LAAS 0521” Guillaume Paumier (user:guillom) / CC BY-SA 3.0 (cropped)
- Probing the MOS interface with light: “Wafer 20110212” Sangitiana Fararano / CC BY-SA 2.0 (cropped)
- Related lab (Integrated Nanosystems Lab): “Нейрон коры с множеством дендритных шипиков” Sergb95 / CC BY-SA 4.0 (cropped)
- Related lab (Human-Centric Engineering Lab): “Gait laboratory” D. Gordon E. Robertson / CC BY-SA 3.0 (cropped)
- Related lab (Intelligent Informatics Lab): “Quiet Electric Engine V1 (QUEEN V1) Experiment (GRC-2024-C-06530)” NASA Glenn Research Center / NASA/GRC/Sara Lowthian-Hanna / Public domain (cropped)
- Related lab (Information and Communication Photonics Lab): “Red optical fibers” Tyler Nienhouse / CC BY 2.0 (cropped)
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