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Izumi-Hatano Lab
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A lab that uses simulation to explore the strength of materials and structures, from atoms to large-scale structures.
AboutAbout the lab
Exploring strength through computation, from atoms to structures
The Izumi-Hatano-Sakakima Lab studies problems of strength and fracture resistance (strength and reliability) in materials and components through simulation.
Its targets span a wide range of fields, including semiconductors, railways, electrical equipment, space, and medicine, and the lab works jointly with research institutions and companies in Japan and abroad.
The lab uses multiscale simulation that connects the atomic scale to large structures.
Its themes include devices made from SiC, a next-generation semiconductor material, as well as bolts, wire ropes, and cardiac muscle cells.
Key terms
- Multiscale simulation
- A computational method that connects phenomena of different scales, from the motion of atoms to the behavior of components and structures
- Molecular dynamics
- A method that uses computers to calculate the motion of individual atoms and molecules in order to study the properties and phenomena of materials
- Dislocation
- A line-shaped region in a crystal where the arrangement of atoms is shifted. It is related to how a material deforms and how strong it is
NewsLab news
Prof. Izumi and colleagues received the Japan Society of Mechanical Engineers Award (Paper) for their research
Lecturer Sakakima received the Japan Society of Mechanical Engineers Encouragement Award (Research)
A research internship was held for mechanical engineering students at the School of Engineering, the University of Tokyo
The Izumi Lab held an open lab event
Lecturer Sakakima received the Outstanding Presentation Award from the Materials and Mechanics Division of the Japan Society of Mechanical Engineers
ResearchResearch themes
The lab tackles problems of mechanics of materials, strength, and reliability in a wide range of fields, including semiconductors, railways, electrical equipment, space, and medicine. Through joint research with research institutions and companies in Japan and abroad, it conducts research using multiscale, multiphysics simulation that connects atoms to large structures.
*Illustrative imageStress in SiC Devices
For silicon carbide (SiC), which is attracting attention as a next-generation power device material, the lab develops methods to examine the stress distribution inside devices. It also models how stress affects the degradation in which defects expand during current flow.
*Illustrative imageStrength and Defects of SiC Crystals
Improving the mechanical reliability of devices requires an understanding of the material itself. Using first-principles calculations and molecular dynamics, the lab investigates the strength of SiC and crystal defects such as stacking faults.
*Illustrative imageHow Crystal Dislocations Change Type
In SiC, dislocations that greatly reduce device performance are converted into less harmful dislocations of a different type during film deposition. The lab aims to clarify the mechanism of this conversion using molecular dynamics.
*Illustrative imageExploring Material Strength with Molecular Dynamics
Using highly accurate interatomic potentials based on deep learning, the lab analyzes materials that contain many different elements. Currently, it is investigating how strength changes when carbon or nitrogen is mixed into SiO2, which is used for insulating films in semiconductors.
MembersFaculty
The members of the Izumi-Hatano-Sakakima Lab consist of faculty members, research collaborators, commissioned researchers, secretaries, and doctoral, master's, and undergraduate students.As of 2026
- ProfessorSatoshi IzumiPublications ↗
- LecturerAsuka HatanoPublications ↗
- LecturerHiroki SakakimaPublications ↗
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “Steel wire rope on a drum” W.carter / CC0 (cropped)
- Stress in SiC Devices: “SiC wafers 6inch” FDominec / CC BY-SA 4.0 (cropped)
- Strength and Defects of SiC Crystals: “Silicon Carbide” Beeblaine / CC BY 4.0 (cropped)
- How Crystal Dislocations Change Type: “Weak-beam dark-field TEM image of dislocations” Liao Yifeng / CC0 (cropped)
- Exploring Material Strength with Molecular Dynamics: “Cylindrical squalenoyl-doxorubicin nanoparticle” Yesint / CC BY 4.0 (cropped)
- Related lab (Umeno Lab): “SEM-image-showing-crack-propagation-of-TaCCNTsSiC” Qiaoyun Xie, Sylvanus N. Wosu / CC BY 4.0 (cropped)
- Related lab (Micro/Nano Thermofluids Engineering Lab (Kinefuchi Lab)): “Macro view of water droplets on transparent surface” Dreamora96x / CC BY 4.0 (cropped)
- Related lab (Yoshikawa Lab): “Carbon fibre weave” Christine Twigg / CC BY-SA 4.0 (cropped)
- Related lab (Tochigi Lab): “Ernst Ruska Electron Microscope - Deutsches Museum - Munich-edit” J Brew, uploaded on the English-speaking Wikipedia by en:User:Hat'nCoat. / CC BY-SA 3.0 (cropped)
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