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Functional Device Engineering Lab
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A lab that studies materials, processes, and evaluation for Group IV semiconductors.
AboutAbout the lab
Exploring low-power semiconductors through Group IV materials
The Functional Device Engineering Lab studies material and device technologies, process technologies, and evaluation technologies for Group IV semiconductors.
The information society is supported by semiconductor devices, but the power consumption of information and communication equipment is rising every year, so there is demand for low-power semiconductor devices and for power semiconductors that handle electric power with high efficiency.
To meet these needs of society, the lab searches for suitable materials and device structures, puts fabrication methods into practice, and develops methods for evaluating the performance of what it builds.
The lab also conducts joint research with universities, research institutions, and companies in Japan and abroad.
Key terms
- Group IV semiconductor
- A semiconductor made of elements in the same group (Group 14) of the periodic table, such as silicon and germanium
- Power semiconductor
- A semiconductor device used for converting and controlling electric power
- Ge-on-Insulator
- A structure with a germanium layer on top of an insulator. Abbreviated GOI
ResearchResearch themes
As the power consumed by information and communication equipment rises every year, there is demand for lower-power semiconductor devices and for power semiconductors that handle electric power with high efficiency. The lab studies material and device technologies, process technologies, and evaluation technologies for Group IV semiconductors.
*Illustrative imageSi/Ge CMOS process technology
This is basic research on CMOS devices that use germanium (Ge) as the channel. The lab investigates high-k films, metal gates, and metal–Ge contacts, and for SiGe it covers contacts, strain, and defects.
*Illustrative imageGe optoelectronics
The lab develops the underlying technologies needed to realize high-performance Ge optical devices that can be integrated with CMOS. It works on metal–semiconductor contacts and local strain.
*Illustrative imageNew device applications of Ge
The lab studies new uses for Ge, such as Ge spin MOSFETs and flexible Ge thin-film transistors (TFTs). It also works on Ge-on-Insulator.
*Illustrative imageSiC process technology
This is basic research on power devices that use 3C-SiC. The lab works on gate stacks, ohmic contacts, and FETs.
MembersFaculty
- ProfessorDong Wang
- ProfessorKeisuke Yamamoto
VoicesStudent voices
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Report an errorAbout the images
The top and research theme images are illustrative and were not taken at the lab. They are cropped from Wikimedia Commons images. Cropped CC BY-SA images are provided under the same CC BY-SA license as the original (version shown on each line).
- Top image: “IMaGe 31000R – Silicon Wafer 20120926” .RGB. / CC BY 2.0 (cropped)
- Si/Ge CMOS process technology: “IMaGe 31072R – Silicon Wafer 20120926” Rob Bulmahn / CC BY 2.0 (cropped)
- Ge optoelectronics: “Optoelectronics experiment” Adelphi Lab Center / CC BY 2.0 (cropped)
- New device applications of Ge: “A replica of the first working transistor 02” Mister rf / CC BY-SA 4.0 (cropped)
- SiC process technology: “Rounded Silicon Carbide Ingot” LaMèreVeille / CC BY-SA 4.0 (cropped)
- Related lab (電子システム工学研究室): “MicroLEDs” Snehit Jamere / CC BY-SA 4.0 (cropped)
- Related lab (電力変換システム工学研究室): “Electric power transformation substation in Iraq” 作者不詳 / Public domain (cropped)
- Related lab (先進ナノマテリアル科学研究室): “Neon atoms between graphene sheets ( )” Oak Ridge National Laboratory / CC BY 2.0 (cropped)
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